Multi-GHz InP TFT

Award Information
Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Amount:
$99,000.00
Award Year:
2004
Program:
STTR
Phase:
Phase I
Contract:
W31P4Q-04-C-R309
Agency Tracking Number:
04ST1-0041
Solicitation Year:
2004
Solicitation Topic Code:
ST041-005
Solicitation Number:
N/A
Small Business Information
LIGHTSPIN TECHNOLOGIES, INC.
Box 30198, Bethesda, MD, 20824
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
089164565
Principal Investigator
 Eric Harmon
 Research Manager
 (508) 809-9052
 harmon@lightspintech.com
Business Contact
 David Salzman
Title: President
Phone: (301) 656-7600
Email: salzman@lightspintech.com
Research Institution
 Yale University
 Suzanne K Polmar,
 Suite 214, 155 Whitney Avenue
New Haven, CT, 06520
 (203) 432-2460
 Nonprofit college or university
Abstract
This project proposes design, construction and demonstration of a new type of thin-film transistor (TFT), based on indium phosphide compound semiconductors. Models predict unity power gain and unity current gain (fT and fmax) above 10 GHz for the new TFTs in a polycrystalline form compatible with large-area deposition & patterning on flexible metal foils or polymer sheets, using low cost, large (> 1 um) feature sizes. These TFTs should eventually outperform the best high-cost, single-crystal silicon or gallium arsenide transistors at the same feature size and temperature.

* information listed above is at the time of submission.

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