Multi-GHz InP TFT

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$99,000.00
Award Year:
2004
Program:
STTR
Phase:
Phase I
Contract:
W31P4Q-04-C-R309
Award Id:
68881
Agency Tracking Number:
04ST1-0041
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Box 30198, Bethesda, MD, 20824
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
089164565
Principal Investigator:
EricHarmon
Research Manager
(508) 809-9052
harmon@lightspintech.com
Business Contact:
DavidSalzman
President
(301) 656-7600
salzman@lightspintech.com
Research Institute:
Yale University
Suzanne K Polmar,
Suite 214, 155 Whitney Avenue
New Haven, CT, 06520
(203) 432-2460
Nonprofit college or university
Abstract
This project proposes design, construction and demonstration of a new type of thin-film transistor (TFT), based on indium phosphide compound semiconductors. Models predict unity power gain and unity current gain (fT and fmax) above 10 GHz for the new TFTs in a polycrystalline form compatible with large-area deposition & patterning on flexible metal foils or polymer sheets, using low cost, large (> 1 um) feature sizes. These TFTs should eventually outperform the best high-cost, single-crystal silicon or gallium arsenide transistors at the same feature size and temperature.

* information listed above is at the time of submission.

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