Multi-GHz InP TFT

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-04-C-R309
Agency Tracking Number: 04ST1-0041
Amount: $99,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: ST041-005
Solicitation Number: N/A
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-09-02
Award End Date (Contract End Date): 2005-03-15
Small Business Information
Box 30198, Bethesda, MD, 20824
DUNS: 089164565
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Eric Harmon
 Research Manager
 (508) 809-9052
Business Contact
 David Salzman
Title: President
Phone: (301) 656-7600
Research Institution
 Yale University
 Suzanne K Polmar,
 Suite 214, 155 Whitney Avenue
New Haven, CT, 06520
 (203) 432-2460
 Nonprofit college or university
This project proposes design, construction and demonstration of a new type of thin-film transistor (TFT), based on indium phosphide compound semiconductors. Models predict unity power gain and unity current gain (fT and fmax) above 10 GHz for the new TFTs in a polycrystalline form compatible with large-area deposition & patterning on flexible metal foils or polymer sheets, using low cost, large (> 1 um) feature sizes. These TFTs should eventually outperform the best high-cost, single-crystal silicon or gallium arsenide transistors at the same feature size and temperature.

* Information listed above is at the time of submission. *

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