Maskless Lithography for Fabrication of Microelectronics with 100 nm Features

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$42,150.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-04-C-R109
Award Id:
68747
Agency Tracking Number:
03SB2-0444
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
60 Vassar Street, Bldg. 39, Room 427, Cambridge, MA, 02139
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135947088
Principal Investigator:
Henry Smith
Founder
(617) 253-6865
hismith@nano.mit.edu
Business Contact:
Nicholas Economou
CEO
(781) 862-0084
neconomou@rcn.com
Research Institution:
n/a
Abstract
We propose to investigate the feasibility of achieving a throughput of at least one 200 mm diameter wafer per hour, while incorporating a sub-200nm wavelength source into a maskless lithography system of the Zone-Plate-Array Lithography architecture. We will evaluate sources at 193, 157, 121, 13 and 4.5 nm, as well as a variety of sub-200 nm lamp sources.

* information listed above is at the time of submission.

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