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High Power, High Beam Quality Tapered Diode Lasers for Direct Use as High Energy Lasers

Award Information
Agency: Department of Defense
Branch: Army
Contract: W9113M-21-C-0078
Agency Tracking Number: A2-8337
Amount: $549,989.97
Phase: Phase II
Program: SBIR
Solicitation Topic Code: A19-085
Solicitation Number: 19.1
Solicitation Year: 2019
Award Year: 2020
Award Start Date (Proposal Award Date): 2020-07-08
Award End Date (Contract End Date): 2022-03-21
Small Business Information
41 Aero Camino
Goleta, CA 93117-3104
United States
DUNS: 191741292
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jenna Campbell
 (805) 967-4900
Business Contact
 Daniel Renner
Phone: (805) 967-4900
Research Institution

This Phase 2 program seeks to demonstrate and deliver chip-on-submount tapered diode laser devices operating in the 9xx-10xx nm band and based on our high power epitaxy in this wavelength range.  The scope of work includes simulation, design, growth, fabrication, bond and test.  Two rounds of development are planned over the 24 month effort.  We will be doing FAC lens attach on these devices as well as performing a small (~20 unit) step stress accelerated lifetest.  No facet passivation is anticipated.  The technical objective at the end of the program is >10W, >63% E/O with M2 < 1.1.

* Information listed above is at the time of submission. *

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