Magnolia Optical Technologies,Inc.

Company Information

Company Name
Magnolia Optical Technologies,Inc.
Address
52-B Cummings Park
Suite 314
Woburn, MA, -
Phone
978-821-7500
URL
http://www.magnoliaoptical.com
DUNS
32691763
Number of Employees
6
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,045,081.00
12
SBIR Phase II
$7,339,455.00
8
STTR Phase I
$489,789.00
5
STTR Phase II
$2,818,239.00
3
Chart code to be here

Award List

  1. Design and Development of High Performance UV Imaging Focal Plane Arrays

    Amount: $98,999.00

    Magnolia Proposes to design, optimize and demonstrate small-pixel Gallium Nitride based Ultraviolet (UV) Avalanche Photo Diodes (APD) for solar blind UV imaging and applications. As part of the propo ...

    SBIR Phase I 2010 Defense Advanced Research Projects AgencyDepartment of Defense
  2. Design and Development of ZnO Nanowire based UV/IR Sensors for Threat Detection and Threat Warning Applications

    Amount: $749,998.00

    Next generation UV Nanotechnology based sensors are needed for a variety of Naval Systems that includes Threat detection, Hostile fire indication (HFI) and Threat Warning Applications. Magnolia as par ...

    STTR Phase II 2010 NavyDepartment of Defense
  3. High Performance AlGaN HEMT Devices Grown on Lattice Matched Substrates

    Amount: $69,796.00

    "AlGaN-based heterostructures have demonstrated versatility in optical and electronic applications which is practically unmatched by other material systems. The AlGaN/GaN high electron mobility transi ...

    SBIR Phase I 2002 Missile Defense AgencyDepartment of Defense
  4. High Performance AlGaN HEMT Devices Grown on Lattice Matched Substrates

    Amount: $749,984.00

    AlGaN-based heterostructures have demonstrated versatility in RF electronics applications which is practically unmatched by other material systems. In particular, the AlGaN/GaN high electron mobility ...

    SBIR Phase II 2004 Missile Defense AgencyDepartment of Defense
  5. Low Power Highly Integrated Packaging Schemes for High-Speed Transceiver Modules

    Amount: $69,522.00

    "Magnolia will develop an ultra high-speed, two-dimensional parallel optical modules with 10 x 10 up to 32 x 32 matrix arrays to transmit and receive information over distances up to one kilometer for ...

    SBIR Phase I 2002 ArmyDepartment of Defense
  6. Low Power Highly Integrated Packaging Schemes for High-Speed Transciever

    Amount: $718,046.00

    Magnolia Optical Technologies proposes to develop a terabit 2-dimensional optical transceiver module. The module will provide the critical interface to the processors and servers in the future US Arm ...

    SBIR Phase II 2003 ArmyDepartment of Defense
  7. Innovative Processing for the Manufacturing of High- Performance and High- Reliability GaN-based Devices for High Power RF Applications

    Amount: $69,992.00

    GaN and AlGaN-based devices have demonstrated versatility in RF electronic applications which is practically unmatched by any other material system. Several device structures are good candidates for p ...

    SBIR Phase I 2003 Missile Defense AgencyDepartment of Defense
  8. Development of Radiation Hardened Anti-Reflection Coatings for Long Wavelength HgCdTe Detector Arrays

    Amount: $69,999.00

    Recent interest in developing system, sub-system and related technologies to defeat incoming hostile missile threats is of great interest to MDA for acquisition, tracking and discriminating various ta ...

    SBIR Phase I 2003 Missile Defense AgencyDepartment of Defense
  9. High Performance Multi-color VLWIR HgCdTe Focal Plane Array for Space Applications

    Amount: $68,777.00

    Multi-color infrared (IR) focal planes are highly desirable for next generation advanced IR systems for space and the missile defense applications. Multi-color focal plane arrays (FPA) in long wavelen ...

    SBIR Phase I 2003 Missile Defense AgencyDepartment of Defense
  10. High Performance ZnO Spintronic devices (Laser and Resonant Tunneling Diodes) With High Switching Speeds and Frequencies

    Amount: $99,992.00

    Zinc Oxide has emerged as a key semiconductor that will have a broad range of applications in Opto-electronic and Spintronic devices. ZnO has a large band gap and has potential applications in Light E ...

    STTR Phase I 2004 Air ForceDepartment of Defense

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