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Methodologies to Develop Radiation Testing Environments for Survivable Microelectronics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0860-22-C-7502
Agency Tracking Number: B21B-T001-0078
Amount: $149,970.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA21-T001
Solicitation Number: 21.B
Timeline
Solicitation Year: 2021
Award Year: 2022
Award Start Date (Proposal Award Date): 2021-12-06
Award End Date (Contract End Date): 2022-06-05
Small Business Information
2900 S MAIN ST
SALT LAKE CITY, UT 84115-3516
United States
DUNS: 013017947
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Larry Sadwick
 (801) 975-7399
 sadwick@innosystech.com
Business Contact
 Jennifer Hwu
Phone: (801) 975-7399
Email: hwu@innosystech.com
Research Institution
 University of Utah
 Douglas Wawrzynski
 
75 South 2000 East RAB Rm 211
Salt Lake City, UT 84112-8930
United States

 (801) 581-5517
 Nonprofit College or University
Abstract

We will investigate the radiation effects on microelectronics due to gamma-rays and beta-rays and compare the effects on electrical and material properties between the two radiation types to formulate a quantitative mapping of radiation types (gamma and beta) and effects. The purpose is to: 1) Develop an overall physics-based strategy; 2) Define the experimental design, guided by analytical calculations, preliminary simulations, and the literature; 3) Measure gamma-ray effects in microelectronics; 4) Measure beta-ray (electron) effects in microelectronics; 5) Compare and develop a quantitative relationship between the dosimetric and radiation effects between gamma- and beta-ray radiation via guidance of electrical and material experimental result. Importantly, we will compare the radiation effects from this radiation such that future experimentation, simulation/modeling, and analyses can more confidently rely on the body of knowledge previously generated (primarily in gamma-ray fields). Phase I: Demonstrate and show feasibility of a methodology to develop test environments that will demonstrate survivability and extracting key metrics of this survivability using gamma- vs. beta-ray environments. We will consider whether existing methods of generating gamma and beta environments can be used, or whether innovative approaches are needed. Phase II: Implement the Phase I results in a prototype test design. Demonstrate the methodology by conducting an experimental study where the microelectronics are tested in partial and combined gamma- and/or beta-ray environments. Consider whether existing methods of generating, testing, and assessing microelectronics in gamma and beta environments can be used, or whether innovative approaches are needed. Phase III: Develop a quantitative comparison between gamma vs. beta environments. This will be based on Phase II experimental results, analysis of dose contributions to various components of the microelectronic architecture and resulting impacts on material and electrical properties. Here, the assessment of commercial/civil vs. military radiation hardness requirements apply. Approved for Public Release | 21-MDA-11013 (19 Nov 21)

* Information listed above is at the time of submission. *

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