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Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 25573
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
330 Pleasant Street
Belmont, MA 02178
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Hoton How, Phd
 (617) 484-2296
Business Contact
Phone: () -
Research Institution

In the past microwave/millimeter wave (MMW) ferrite filters have been fabricated utilizing insulating ferrite materials. We propose for the first time a degisn in which metallic magnetic films are used. Whereas conventional filter designs which include insulating ferrite materials utilize the phenomenon of ferromagnetic resonance (FMR), we propose the use of magnetic metal films in filter designs and utilize the phenomenon of ferromagnetic anti-resonance (FMAR). Preliminary studies indicate that in comparing the characteristics of the two thypes of filters the filter utilizing magnetic metal films are superior in terms of insertion loss and integrability with other planer MMW devices. Our design includes a thin magnetic metal film in the substrate layer of a microstrip line parallel to the ground plane. The characteristic impedance of the microstrip line in the absence of the metal film is 50 ohm. A dc magnetic field is applied normal to the film plane. When the magnetic film is biased away from FMAR the magnetic metal film interferes strongly with wave propagation. The characteristic impedance of the line is much smaller than 50 ohm. When the magnetic metal film is biased at FMAR the skin depth within the magnetic metal film becomes substantially greater than the film thickness. At FMAR the impedance of the line changes back to 50 ohm which matches the input signal feeder line. Therefore, design of band-pass filter can be realized in which the transmission frequency occurs at FMAR frequency with a frequency bandwidth equal to the FMAR linewidth.

* Information listed above is at the time of submission. *

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