SIC FILAMENTS FROM A PITCH FILAMENT-SILICON SOURCE

Award Information
Agency:
National Science Foundation
Amount:
$200,000.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
1988
Phase:
Phase II
Agency Tracking Number:
2660
Solicitation Topic Code:
N/A
Small Business Information
Materials & Electrochemical Rs
150 N Stone, Tucson, AZ, 85701
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Dr J C Withers
 Technical Manager
 (602) 749-3257
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THERE IS A WIDESPREAD USE FOR SIC FILAMENT WITH HIGH STRENGTH THEORETICAL DENSITY AND MODULUS IN A SMALL DIAMETER. CURRENT SIC FILAMENT EITHER HAS HIGH POROSITY AT 25% AND LOW STRENGTH OR IS LARGE IN DIAMETER AT 140 M. THIS PROGRAM PRPOSES TO PRODUCE ECONOMICAL HIGH STRENGTH (>500,000 PSI) SIC FILAMENTS WITH THEORETICAL DENSITY AND MODULUS FROM PITCH AND SILICON PRECURSORS. THE PROGRAM UTILIZES KNOWN TECHNOLOGY TO PRODUCE PITCH BASE FILAMENTS CONTAINING A SILICON SOURCE. A STATISTICAL EXPERIMENTAL INVESTIGATION EXAMINES THE CONDITIONS TO PRODUCE REACTION BONDED PRESSURELESS SINTERED DENSE SIC FILAMENTS WITH A TARGET STRENGTH OF 50,000 PSI. A REACTION MODEL WILL BE DEVELOPED FROM THE STATISTICAL IMPORTANT PARAMETERS THAT WILL FORM THE BASIS OF FILAMENT IMPROVEMENT DEVELOPMENT IN PHASE II.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government