SIC FILAMENTS FROM A PITCH FILAMENT-SILICON SOURCE

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$200,000.00
Award Year:
1988
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
2660
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Materials & Electrochemical Rs
150 N Stone, Tucson, AZ, 85701
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr J C Withers
Technical Manager
(602) 749-3257
Business Contact:
() -
Research Institution:
n/a
Abstract
THERE IS A WIDESPREAD USE FOR SIC FILAMENT WITH HIGH STRENGTH THEORETICAL DENSITY AND MODULUS IN A SMALL DIAMETER. CURRENT SIC FILAMENT EITHER HAS HIGH POROSITY AT 25% AND LOW STRENGTH OR IS LARGE IN DIAMETER AT 140 M. THIS PROGRAM PRPOSES TO PRODUCE ECONOMICAL HIGH STRENGTH (>500,000 PSI) SIC FILAMENTS WITH THEORETICAL DENSITY AND MODULUS FROM PITCH AND SILICON PRECURSORS. THE PROGRAM UTILIZES KNOWN TECHNOLOGY TO PRODUCE PITCH BASE FILAMENTS CONTAINING A SILICON SOURCE. A STATISTICAL EXPERIMENTAL INVESTIGATION EXAMINES THE CONDITIONS TO PRODUCE REACTION BONDED PRESSURELESS SINTERED DENSE SIC FILAMENTS WITH A TARGET STRENGTH OF 50,000 PSI. A REACTION MODEL WILL BE DEVELOPED FROM THE STATISTICAL IMPORTANT PARAMETERS THAT WILL FORM THE BASIS OF FILAMENT IMPROVEMENT DEVELOPMENT IN PHASE II.

* information listed above is at the time of submission.

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