A UNIQUE AND NEW PLASMA ASSISTED DEPOSITION TECHNIQUE UTILIZING IN-SITU RENUCLEATION

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$50,000.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
17351
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Materials And Electrochemical
7960 South Kolb Rd, Tucson, AZ, 85706
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. J. C. Withers
(602) 574-1980
Business Contact:
() -
Research Institution:
n/a
Abstract
NEW TECHNOLOGIES FOR PRODUCING USEFUL PRODUCTS WITH ENGINEERED MICROSTRUCTURES AND PROPERTIES FOR OPTIMIZED MECHANICAL PERFORMANCE CREATES AN INSATIABLE DEMAND FOR MATERIALS PROCESSING AND MANUFACTURING. PLASMA ASSISTED CHEMICAL VAPOR DEPOSITIONS (PACVD) IS A NEW TECHNIQUE FOR MATERIALS PROCESSING THAT HAS THE CAPABILITY TO SUBSTANTIALLY ENHANCE DEPOSITION RATES. "WORKING" OF A DEPOSITION SURFACE CAN CAUSE CONTINUED RENUCLEATION TO PRODUCE A VERY FINE GRAINED DEPOSIT, DEFECT AND STRESS FREE THAT IS SMOOTH TO VIRTUALLY ANY THICKNESS WITH SUBSTANTIALLYIMPROVED MECHANICAL PROPERTIES. THIS PROGRAM PROPOSES TO DEVELOP A HIGH WATT DENSITY PLASMA CVD PROCESS COUPLED WITH CONTINUAL IN-SITU "WORKING" OF THE DEPOSITION SURFACE TO ACHIEVE EXTRORDINARILY HIGH DEPOSITION RATES IN A VERY FINE GRAINED STRESS FREE DEPOSITS WITH MECHANICAL PROPERTIES SUBSTANTIALLY GREATER THAN CONVENTIONAL MATERIALS. THE PROCESS WILL BE DEMONSTRATED WITH DIFFICULT TO FABRICATE REFRACTORY MATERIALS OF TUNGSTEN AND THE COVALENT BONDED CERAMICS OF SI3N4, SIC AND TIB2.

* information listed above is at the time of submission.

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