DOPING OF CHEMICALLY VAPOR DEPOSITED SILICON CARBIDE TO ENHANCE THERMAL CONDUCTIVITY

Award Information
Agency:
Department of Energy
Branch:
N/A
Amount:
$600,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
21115
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Materials And Electrochemical
7960 S Kolb Rd, Tucson, AZ, 85706
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Mr Prakash Arya
 (602) 574-1980
Business Contact
Phone: () -
Research Institution
N/A
Abstract
SILICON CARBIDE-SILICON CARBIDE (SIC/SIC) COMPOSITES HOLD SIGNIFICANT PROMISE FOR USE IN FUSION ENERGY SYSTEMS. EVEN GREATER OPPORTUNITY EXITS IF THE THERMAL CONDUCTIVITY OF THE CHEMICALLY VAPOR INFILTRATED (CVI) MARIX COULD BE IMPROVED. IT HAS BEEN SHOWN THAT THE THERMAL CONDUCTIVITY OF HOT PRESSED SIC CAN BE SIGNIFICANTLY ENHANCED USING SELECT DOPANTS. THIS PHASE I PROGRAM WILL INVESTIGATE THE EFFECT OF SELECT DOPANTS ON THE THERMAL CONDUCTIVITY OF CHEMICALLY VAPOR DEPOSITED (CVD) SIC. THE DOPANTS WILL BE CODEPOSITED AND THEIR CONCENTRATION EFFECTS ON THE THERMAL CONDUCTIVITY OF CVD SIC WILL BE ESTABLISHED. ONE DOPANT WILL BE SELECTED AND FURTHER OPTIMIZED WITH THERMAL CONDUCTIVITY MEASURED TO 1200 DEGREES CENTIGRADE. FEASIBILITY WILL BE DEMONSTRATED IF THE THERMAL CONDUCTIVITY OF A CVI SIC MATRIX CAN BE SIGNIFICANTLY ENHANCED THROUGH CODEPOSITION OF DOPANTS.

* information listed above is at the time of submission.

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