Development of a New Method for Fabricating SiC-On-Insulator Compliant Substrate

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$650,000.00
Award Year:
1998
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
19657
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Materials Technologies Corp
57 Maryanne Drive, Monroe, CT, 06468
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
John Pike
(203) 874-3100
Business Contact:
() -
Research Institution:
n/a
Abstract
SURVEILLANCE IN THE INFRA-RED PART OF THE ELECTROMAGNETIC SPECTRUM DEMANDS INNOVATIVE CONCEPTS TO DESIGN QUANTUM WELL (QW) DETECTORS FOR WAVELENGTH BEYOND 12 UM. THE REQUIREMENT FOR LOW TUNNELING CURRENT AND SUPERIOR TRANSPORT PROPERTIES MAKE InAs-In(x)Ga(1-x)Sb, A TYPE II SUPERLATTICE, A SUITABLE CANDIDATE FOR INFRA-RED APPLICATION. STRAIN INDUCED BAND GAP VARIATION AND WAVELENGTH CONTROLLABILITY USING SUPERLATTICE PERIOD ENABLES ONE TO USE THIS SYSTEM OVER A WAVELENGTH RANGE OF 4-24 UM. A REDUCTION IN SHOT NOISE USING DOUBLE-PERIODIC SUPERLATTICE WILL ENABLE TO REALIZE A LARGE SIGNAL TO NOISE RATIO. MOREOVER, THE SCHEME EMPLOYED TO REDUCE SHOT NOISE WILL RESULT IN AN ENHANCED ABSORPTION COEFFICIENT MAKING POSSIBLE THE REALIZATION OF A DETECTOR WITH A LARGE SIGNAL TO NOISE RATIO.

* information listed above is at the time of submission.

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