Novel Rapid Thermal Processing (RTP) system for High Temperature Power Devices Applications

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$60,000.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
35895
Agency Tracking Number:
35895
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1776 Mentor Ave, Cincinnati, OH, 45212
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Ming Fu
(513) 631-0505
Business Contact:
() -
Research Institution:
n/a
Abstract
Revolutionary high power electronics based on new materials such as SiC and GaN hold promise in numerous applications in power electronics, control and distribution circuits, hybrid drive-train automobiles, ''more electric" aircraft (avionics) and next generation battleships. These high-temperature materials require novel high-temperature (> 1500_C) processing schemes for improving the efficiency of the implant activation, alloying of the contacts, etc. Presently, there are no processing systems available, which can heat-treat these materials at high temperatures for short times. In this project, MHI (Micropyretics Heaters International, Inc.) in collaboration with University of Florida, proposes to design and construct a novel rapid thermal processing (RTP) system specifically engineered to anneal compound semiconductors such as GaN and SiC. This proposed RTP system will be capable of achieving very high uniform temperatures (up to 1500 _C) in controlled environment for wafers sizes up to 1" in diameter. To achieve these technical objectives, the RTP system will be designed using MoSi2 heating elements, a technology pioneered, patented and cornmercialized by MHI. These elements are capable of generating very high uniform optical flux ( ~100 W/cm2) needed for high-temperature RTP processing. Incollaboration with the University of Florida, MHI plans to conduct implant activation experiments in GaN and SiC. This research will lead to new methods to process high temperature compound semi conductors 1 ike GaN and SiC, which have wide ranging application in power electronics and related industries

* information listed above is at the time of submission.

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