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Electro-Optic Photonic Integrated Circuits in Thin Lithium Niobate

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: 80NSSC22PB149
Agency Tracking Number: 222014
Amount: $149,997.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: T8
Solicitation Number: STTR_22_P1
Solicitation Year: 2022
Award Year: 2022
Award Start Date (Proposal Award Date): 2022-07-22
Award End Date (Contract End Date): 2023-08-25
Small Business Information
116 Sandy Drive
Newark, DE 19713-1187
United States
DUNS: 805473951
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrew Mercante
 (302) 286-5191
Business Contact
 Ahmed Sharkawy
Phone: (302) 898-5544
Research Institution
 University of Delaware
Northern Boulevard
Newark, DE 19716-0099
United States

 Nonprofit College or University

Lithium niobate (LiNbO3) has been a widely used electro-optic (EO) material since the 1970rsquo;s. Large electro-optic (EO) coefficients and lower third-order nonlinearity compared to other III-V materials (e.g., InP, Si) make LiNbO3 an ideal candidate for active photonic devices. Although indium phosphide (InP) and silicon (Si) -based foundries are already established, a LiNbO3-based foundry is something unimaginable until now. Recently, advances in crystal ion sliced (CIS) films of LiNbO3 on insulator (TFLNOI), which guide optical modes almost 20 times smaller than their bulk-LiNbO3 counterparts have emerged as an answer to some of these issues. Now, strip-loaded waveguides can be used to tightly confine the optical mode, allowing smaller electrode gaps, decreased Vpi;, tighter bending radii and PIC compatibility. With this advance in thin-film technology, photonic integrated circuits (PICs) in the LiNbO3 platform can now be realized, paving the way for future LiNbO3 platform-based foundries. Our goal is to investigate fundamental building blocks for TFLNOI PICs and ultimately demonstrate the utility of these unit-cells to produce an EO modulator that will reduce the footprint of standard Mach-Zehnder Modulators and bring improved DC and high-frequency EO response.

* Information listed above is at the time of submission. *

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