High-Power Pulsed Laser Diode Driver Utilizing Low Tempature Growth GaAs Power Switches

Award Information

Agency: Department of Defense

Branch: Air Force

Contract: N/A

Agency Tracking Number: 28130

Amount: $77,275.00

Phase: Phase I

Program: SBIR

Solicitation Topic Code: N/A

Solicitation Number: N/A

Timeline

Solicitation Year: N/A

Award Year: 1995

Award Start Date (Proposal Award Date): N/A

Award End Date (Contract End Date): N/A

Small Business Information

Mellwood Laboratorytories,

1291 Cumberlamd Ave. Suite E

West Lafayette, IN 47906

United States

DUNS: N/A

HUBZone Owned: No

Woman Owned: No

Socially and Economically Disadvantaged: No

Principal Investigator

Name: Eric S. Harmon
Phone: (317) 426-3662

Business Contact

Phone: () -

Research Institution

N/A

Abstract

The proposed research entails the development of a pulsed power driver capable of producing an electrical pulse with peak currents greater than 200 amps, peak powers greater than 200 kilowatts, and repetition rates greater than 10 kHz. MellWood Laboratories, Inc. has developed an entirely solid state system to create these high power pulses. The switching device consists of a monolithically integrated light emitting diode (LED) and a high power metal-semiconductor-metal (MSM) photo-switch. The integrated LED optically switches the MSM photoconductor. The vertical integration of an A1GaAs LED with an annealed low temperature growth A1GaAs MSM photoconductive switch allows a new class of high power devices to be developed. This high-power, compact, solid state pulsed power driver will be utilized to drive pulsed laser diodes for such applications as LIDAR.

* Information listed above is at the time of submission. *

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High-Power Pulsed Laser Diode Driver Utilizing Low Tempature Growth GaAs Power Switches