High-Power Pulsed Laser Diode Driver Utilizing Low Tempature Growth GaAs Power Switches

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$77,275.00
Award Year:
1995
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
28130
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Mellwood Laboratorytories,
1291 Cumberlamd Ave. Suite E, West Lafayette, IN, 47906
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Eric S. Harmon
(317) 426-3662
Business Contact:
() -
Research Institution:
n/a
Abstract
The proposed research entails the development of a pulsed power driver capable of producing an electrical pulse with peak currents greater than 200 amps, peak powers greater than 200 kilowatts, and repetition rates greater than 10 kHz. MellWood Laboratories, Inc. has developed an entirely solid state system to create these high power pulses. The switching device consists of a monolithically integrated light emitting diode (LED) and a high power metal-semiconductor-metal (MSM) photo-switch. The integrated LED optically switches the MSM photoconductor. The vertical integration of an A1GaAs LED with an annealed low temperature growth A1GaAs MSM photoconductive switch allows a new class of high power devices to be developed. This high-power, compact, solid state pulsed power driver will be utilized to drive pulsed laser diodes for such applications as LIDAR.

* information listed above is at the time of submission.

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