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Packaging High Temperature Electronics for Harsh Flight Environments

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0860-22-C-7832
Agency Tracking Number: B221-008-0202
Amount: $149,984.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA22-008
Solicitation Number: 22.1
Solicitation Year: 2022
Award Year: 2022
Award Start Date (Proposal Award Date): 2022-07-25
Award End Date (Contract End Date): 2023-01-24
Small Business Information
116 Sandy Dr.
Newark, DE 19713-1111
United States
DUNS: 805473951
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Peng Yao
 (302) 286-5191
Business Contact
 Ahmed Sharkawy
Phone: (302) 286-5191
Research Institution

Today’s high-power photodiode is perhaps one of the high temperature electronics (HTEs) that requires the highest dissipated heat density. Herein, Phase Sensitive Innovations (PSI) propose to develop a uni- travelling carrier (UTC) photodiode package that has significantly higher saturation power than the current high-speed photodiodes based on hybrid integration of the photodiode structure on high thermal conductivity substrates and optimization of the thermal interface conductance (TIC). In phase I period, we will build a comprehensive thermal model for the high-power UTC photodiode structure. This model will be verified experimentally using a time domain thermal reflectance (TDTR) approach developed by our subcontractor in University of Delaware (UD). New interface materials such like TiN and TiB 2 will be studied to improve the TIC at the metal / dielectric substrate boundary. In addition, basic fabrication processes such as die bonding and wafer bonding will be studied for the hybrid integration of photodiode epi-structures with high temperature substrates (HTSs) such as diamond and SiC. Approved for Public Release | 22-MDA-11215 (27 Jul 22)

* Information listed above is at the time of submission. *

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