Characterization Of Noise And Detectivity Of Nano-BiCMOS Photo-Detectors

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,979.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-10-C-S004
Agency Tracking Number:
A092-089-0705
Solicitation Year:
2009
Solicitation Topic Code:
A09-089
Solicitation Number:
2009.2
Small Business Information
B & W TEK INC.
#19 Shea Way, Suite 301, Newark, DE, 19713
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
964792485
Principal Investigator:
Jie Yao
Principal Scientist
(302) 368-7824
jiey@bwtek.com
Business Contact:
Sean Wang
CTO
(302) 368-7824
jdwright@tda.com
Research Institution:
n/a
Abstract
Low light level visible and infrared imaging has significant importance in military surveillance and target recognition. Our newly developed low-light-level nano-BiCMOS silicon photo-detector has been experimentally proven to consistently deliver in-pixel high-gain amplification to boost external quantum efficiency and photo current signal without increased dark current. The same class of detector is expected cover near infrared as well as the visible spectrum. The resulting semiconductor-based camera will enjoy at least 20-year lifetime, fieldable ruggedness, light weight and small size of a consumer camcorder. In Phase I we will perform detailed instrumentation and characterization of the room-temperature dark current noises of our nano-BiCMOS photo-detector and deduce its detectivity D*. In Phase II we will prototype and characterize a complete silicon nano-BiCMOS camera system, which will be delivered to DoD Labs for evaluation and demonstration. Noise and detectivity D* will be characterized in detail. During Phase III, we will manufacture and market the proposed camera to defense contractors for incorporation into military systems and for our own Raman spectroscopy products.

* information listed above is at the time of submission.

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