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High Voltage and Speed SiC MOSFETs through Improved Gate Dielectric Interfaces
Award Information
Agency: Department of Defense
Branch: Defense Microelectronics Activity
Contract: HQ072722C0007
Agency Tracking Number: 22-2E3
Amount:
$1,099,637.86
Phase:
Phase II
Program:
SBIR
Solicitation Topic Code:
DMEA221-D01
Solicitation Number:
22.1
Timeline
Solicitation Year:
2022
Award Year:
2022
Award Start Date (Proposal Award Date):
2022-08-02
Award End Date (Contract End Date):
2024-07-31
Small Business Information
200 Yellow Place Pines Industrial Center
Rockledge, FL
32955-1111
United States
DUNS:
175302579
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Justin Hill
Phone: (321) 631-3550
Email: jhill@mainstream-engr.com
Phone: (321) 631-3550
Email: jhill@mainstream-engr.com
Business Contact
Name: Michael Rizzo
Phone: (321) 631-3550
Email: contracting@mainstream-engr.com
Phone: (321) 631-3550
Email: contracting@mainstream-engr.com
Research Institution
N/A
Abstract
Development of high voltage gated semiconductor device process that leverages the enhanced power handling capability of SiC, and remediates the undesirable effects (threshold voltage instability, increased interface capacitance) associated with native SiO2 growth from commercially available 4H-SiC and 6H-SiC polytypes. The process improvement and resultant performance enhancements gained will be validated by characterization of prototype devices
* Information listed above is at the time of submission. *
