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GeSiSn Avalanche Photodiode Arrays for High-Sensitivity SWIR Imaging Applications

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8649-22-P-0641
Agency Tracking Number: FX211-CSO1-0860
Amount: $749,988.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: AF211-CSO1
Solicitation Number: X21.1
Solicitation Year: 2021
Award Year: 2022
Award Start Date (Proposal Award Date): 2022-03-07
Award End Date (Contract End Date): 2023-06-07
Small Business Information
41 Aero Camino
Goleta, CA 93117-3104
United States
DUNS: 191741292
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Maddy Woodson
 (805) 967-4900
Business Contact
 Daniel Renner
Phone: (805) 967-4900
Research Institution

The germanium silicon tin (GeSiSn) materials system has been identified as a promising enabling technology for critical short-wave infrared applications. In particular, the GeSiSn materials system offers a unique design space for avalanche photodiodes, which offer sgnficantly enhanced sensitivint over conventional PIN structures, with applications in next-generation Intelligence, Surveillance, and Reconnaissance (ISR) systems, night vision, and Light Detection and Ranging (LiDAR). Currently, a major technology gap exists for small-pitch, large format detector arrays capable of operating at a wavelength of 2 µm or longer, without the need for physically sizable cooling, which can be addressed using a GeSiSn APD. Freedom Photonics has significant technology experience focused on the development of PIN photodiodes using this materials system, including arrayed devices. In Phase II of this SBIR program, Freedom Photonics will develop single element avalanche photodiodes using GeSiSn materials suitable for operation at a SWIR wavelengths out to 3 µm. This effort will include the design, fabrication, and characterization of the first generation of these avalanche photodiodes, demonstrating the feasibility assessed in the Phase I. The overall objective of this program is to develop APD arrays for integration into focal plane arrays.

* Information listed above is at the time of submission. *

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