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Low Temperature Homogeneous Epitaxy of 4H-SiC Using Novel Precursors
Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-22-C-2321
Agency Tracking Number: F19B-015-0060
Amount:
$749,927.00
Phase:
Phase II
Program:
STTR
Solicitation Topic Code:
AF19B-T015
Solicitation Number:
19.B
Timeline
Solicitation Year:
2019
Award Year:
2022
Award Start Date (Proposal Award Date):
2022-07-25
Award End Date (Contract End Date):
2024-10-11
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ
08854-1111
United States
DUNS:
787144807
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Dr. Gary S. Tompa
Phone: (732) 302-9274
Email: gstompa@aol.com
Phone: (732) 302-9274
Email: gstompa@aol.com
Business Contact
Name: Dr. Gary S. Tompa
Phone: (732) 302-9274
Email: gstompa@aol.com
Phone: (732) 302-9274
Email: gstompa@aol.com
Research Institution
Name: University of South Carolina, College of Engineering and Computing
Contact: MVS Chandrashekhar
Address:
Phone: (803) 777-1118
Type: Nonprofit College or University
Contact: MVS Chandrashekhar
Address:
Room 3A14 Swearingen
Columbia, SC
29208
United States
Phone: (803) 777-1118
Type: Nonprofit College or University
Abstract
Currently, the Silicon Carbide based power electronic market is at an inflexion point from which it is expected to grow at a faster rate – increasing from ~28% CAGR to ~40% CAGR and to do so on increasingly larger wafers – presently moving from 150mm to
* Information listed above is at the time of submission. *
