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Low Temperature Homogeneous Epitaxy of 4H-SiC Using Novel Precursors

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-22-C-2321
Agency Tracking Number: F19B-015-0060
Amount: $749,927.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: AF19B-T015
Solicitation Number: 19.B
Solicitation Year: 2019
Award Year: 2022
Award Start Date (Proposal Award Date): 2022-07-25
Award End Date (Contract End Date): 2024-10-11
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ 08854-1111
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr. Gary S. Tompa
 (732) 302-9274
Business Contact
 Dr. Gary S. Tompa
Phone: (732) 302-9274
Research Institution
 University of South Carolina, College of Engineering and Computing
 MVS Chandrashekhar
Room 3A14 Swearingen
Columbia, SC 29208
United States

 (803) 777-1118
 Nonprofit College or University

 Currently, the Silicon Carbide based power electronic market is at an inflexion point from which it is expected to grow at a faster rate – increasing from ~28% CAGR to ~40% CAGR and to do so on increasingly larger wafers – presently moving from 150mm to

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