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Heteroepitaxy of Indium Phosphide-Based Quantum Cascade Lasers on Silicon Substrates

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68936-22-C-0021
Agency Tracking Number: N22A-T007-0244
Amount: $139,583.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N22A-T007
Solicitation Number: 22.A
Timeline
Solicitation Year: 2022
Award Year: 2022
Award Start Date (Proposal Award Date): 2022-08-03
Award End Date (Contract End Date): 2023-01-17
Small Business Information
3259 PROGRESS DRIVE
ORLANDO, FL 32826-1111
United States
DUNS: 052971564
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Enrique Cristobal
 (321) 877-9952
 enrique.sanchez@irglare.com
Business Contact
 Elena Lyakh
Phone: (310) 720-3286
Email: elena.lyakh@irglare.com
Research Institution
 University of Central Florida - Office of Research
 Erica Spaulding
 
12201 Research Parkway, Suite 501
Orlando, FL 32826-3246
United States

 (407) 882-1138
 Nonprofit College or University
Abstract

The development of heteroepitaxy growth and laser fabrication for the monolithic integration of InP-based quantum cascade laser (QCL) structures onto silicon substrates. Fully optimized QCLs-on-Si will deliver over 5W of CW power in a nearly diffraction limited beam (M2 < 1.5) with 25% wallplug efficiency. These devices will find immediate applications in directed infrared countermeasures, integrated platforms for man-portable or UAV-based chemical/biological sensing, environmental monitoring, out-of-band active (hyperspectral) imaging/illumination, and other infrared DoD applications.

* Information listed above is at the time of submission. *

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