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Epsilon-near-zero tunneling diodes for room-temperature IR detectors and light sources

Award Information
Agency: Department of Defense
Branch: Office of the Secretary of Defense
Contract: W911NF-22-P-0029
Agency Tracking Number: O21C-004-0059
Amount: $249,775.91
Phase: Phase I
Program: STTR
Solicitation Topic Code: OSD21C-004
Solicitation Number: 21.C
Timeline
Solicitation Year: 2021
Award Year: 2022
Award Start Date (Proposal Award Date): 2022-06-15
Award End Date (Contract End Date): 2023-06-14
Small Business Information
310 S Harrington St
Raleigh, NC 27603-1111
United States
DUNS: 080132824
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Joshua Caldwell
 (615) 322-0677
 ctshelto@thirdfloormaterials.com
Business Contact
 Christopher Shelton
Phone: (503) 740-7565
Email: ctshelto@thirdfloormaterials.com
Research Institution
 Vanderbilt University
 Meagan Sweet
 
101 Olin Hall; 2400 Highland Ave
Nashville, TN 37212
United States

 (615) 343-8736
 Nonprofit College or University
Abstract

Third Floor Materials, Vanderbilt and Penn State Universities will explore a novel plasmonic rectenna structure capable of detecting and emitting IR light at ambient temperatures. Recent developments at Vanderbilt and Penn State have resulted in unique tools for design of Bragg reflectors capable of accessing polaritonic modes from free space in semiconducting thin films. Our team proposes using these devices combined with MIM tunnel diodes to produce a rectenna structure fast enough to couple to infrared radiation. The innovation proposed is supported by a substantial body of work from the team members developing high quality plasmonic materials, producing rectifying diode structures and fabricating materials and devices with designer absorption/emission profiles in the IR. The Phase I effort will develop materials and methods for production of MIM tunnel diode structures with sufficient asymmetry to rectify IR signals. A systematic study is proposed to examine appropriate metals and dielectrics for the counter electrode and insulator respectively. The antenna portion of the structure will be realized by direct deposition of Bragg reflectors on the tunnel diode. Here a novel inverse design methodology will be used to compute an a asymmetric DBR structure with multiple narrow pass-bands. As a conclusive capstone to the project, a complete, single-pixel rectenna structure will be fabricated and tested in the option period.

* Information listed above is at the time of submission. *

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