Microcirc Assoc.

Company Information
Address 102 Scholtz Plaza, No.238
Newport Beach, CA, 92663


Information

DUNS: 153841499

# of Employees: 9


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Radiation-Hardened High-Speed Synchronous SRAM with Built-in Fault Tolerance

    Amount: $750,000.00

    "The objective of this project is to produce complementary-metal-oxide-semiconductor (CMOS) static-random-access memories (SRAMs) which combine very high operational speed, radiation hardness, amenabi ...

    SBIRPhase II2002Air Force Department of Defense
  2. Radiation-Hardened Synchronous SRAM

    Amount: $99,998.00

    Novel radiation-hardened synchronous pipelined multibank fault-tolerant static-random-access-memory (SRAM) will be developed. The SRAM will combine high speed performanceand radiation-hardness with h ...

    SBIRPhase I2001Air Force Department of Defense
  3. FAULT-TOLERANT INTELLIGENT STATIC RANDOM ACCESS MEMORY

    Amount: $50,000.00

    N/A

    SBIRPhase I1990Missile Defense Agency Department of Defense
  4. INTELLIGENT FAULT-TOLERANT MEMORIES FOR MASS STORAGE DEVICES

    Amount: $486,000.00

    NOVEL INTELLIGENT FAULT-TOLERANT SEMICONDUCTOR MEMORY CIRCUITS FOR FUTURE MASS DATA STORAGE DEVICES ARE PROPOSED FOR RESEARCH AND DEVELOPMENT. THE INTELLIGENT FEATURES WILL INCLUDE SELF-TEST, SELFREPA ...

    SBIRPhase II1986Air Force Department of Defense
  5. INTELLIGENT FAULT-TOLERANT MEMORIES FOR MASS STORAGE DEVICES

    Amount: $50,000.00

    N/A

    SBIRPhase I1985Air Force Department of Defense
  6. INTELLIGENT SYSTEMS

    Amount: $34,000.00

    NOVEL ASSOCIATIVE MEMORY CIRCUITS AND PROCESSING ELEMENTS FOR FUTURE PARALLEL DATA PROCESSING AND COMPUTING SYSTEMS ARE PROPOSED FORRESEARCH AND DEVELOPMENT. THESE VLSI CIRCUITS WILL FEATURE HIGH DENS ...

    SBIRPhase I1983National Science Foundation

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