Thin-Film Deposition of Advanced DRAM and FRAM Memory Device Structures

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DTRA01-01-P-0151
Agency Tracking Number: 01-0044
Amount: $64,990.00
Phase: Phase I
Program: SBIR
Awards Year: 2001
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
5315 Peachtree Industrial Blvd, Chamblee, GA, 30341
DUNS: 806337762
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Guang Cui
 (678) 287-2448
Business Contact
 Jeffrey Moore
Title: Chief Operating Officer
Phone: (678) 287-2403
Research Institution
Herein we propose to apply the proprietary Combustion CVD (CCVD) process to the manufacture of novel structures for dynamic access memory (DRAM) and nonvolatile, ferroelectric random access memory (FRAM) devices. The CCVD process is a thin-film depositiontechnique that operates in the open-atmosphere using low-cost equipment and precursors. It has already demonstrated its ability to epitaxially deposit advanced materials of high permittivity (e.g. barium strontium titanate and lead zirconium titanate).These perovskites have the potenitial to allow for high-performance DRAM and FRAM devices. In addition, the non-silicon, single-crystal substrates used in the proposed work provide an innovative technical approach to demonstrate a new type ofsilicon-on-insulator integrated circuit device. In Phase I, we will optimize CCVD-deposited perovskite thin-films for the envisioned applications. This encompasses a systematic study of deposition parameters and film properties. Multi-layered, epitaxialfilms will be fabricated and fully tested. This will provide key design parameters and form the fundation for the next generation of DRAM and FRAM devices for both military and civilian applications.A novel structured Giga-bit DRAM with high dielectricson non-silicon based substrate will enable fast, high density, smaller, more robust, and reliable IC chips. Those advanced DRAM IC could be installed in control systems for a wide variety of applications in aerospace, naval, industrial and civilapplications. These devices may provide a new generation of DRAM, which is a promising candidate to realize 0.10 m DRAMs and beyond. This advanced DRAM could also satisfy the requirement of cell capacitance in ever shrinking cell size.

* Information listed above is at the time of submission. *

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