Ultra-Fast Level 2 Cache SRAM for High-Performance Military and Spaceborne Computing

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-07-C-0065
Agency Tracking Number: B063-042-0675
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: MDA06-042
Solicitation Number: 2006.3
Small Business Information
MICROELECTRONICS RESEARCH DEVELOPMENT CO
4775 Centennial Avenue, Suite 130, Colorado Springs, CO, 80919
DUNS: 619085371
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Joseph Benedetto
 Principal Investigator
 (719) 531-0805
 joseph.benedetto@micro-rdc.com
Business Contact
 Mary Dyson
Title: Director Business Operations
Phone: (505) 294-1962
Email: mary.dyson@micro-rdc.com
Research Institution
N/A
Abstract
In this proposal we discuss the development of an ultra high-speed synchronous SRAM suitable for use as an embedded level 1 or external level-2 cache memory. The state-of-the-art radiation tolerant/hardened memory devices are of an asynchronous design with access times of 17 to 30ns. The synchronous memory we are proposing has a targeted access time of <3ns (nearly a factor of 6 improvement over the current fastest military devices) and an 18Mbit density (configured for level-2 cache data bus for high-speed processing). This type of memory is extremely popular in the commercial marketplace, but does not exist at all today in a military/rad-hard version. The device we are proposing would be targeted to a commercial fabrication process would use a novel reverse body bias HBD technique to achieve exception total dose hardness without sacrificing speed. Because our proposed SRAM cell is very close in size to a commercial SRAM we could achieve a cost/bit that is potentially a factor of 10 lower than current military asynchronous SRAMs.

* information listed above is at the time of submission.

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