SEE Modeling and Mitigation in Ultra-Deep Submicron Microelectronics

Award Information
Agency:
Department of Defense
Branch
Defense Threat Reduction Agency
Amount:
$749,948.00
Award Year:
2008
Program:
SBIR
Phase:
Phase II
Contract:
HDTRA1-08-C-0063
Agency Tracking Number:
T071-005-0031
Solicitation Year:
2007
Solicitation Topic Code:
DTRA07-005
Solicitation Number:
2007.1
Small Business Information
MICROELECTRONICS RESEARCH DEVELOPMENT CO
4775 Centennial Avenue, Suite 130, Colorado Springs, CO, 80919
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
619085371
Principal Investigator:
David Mavis
Chief Scientist
(505) 294-1962
david.mavis@micro-rdc.com
Business Contact:
Karen Van Cura
Chief Financial Officer
(719) 531-0805
karen.vancura@micro-rdc.com
Research Institution:
n/a
Abstract
As technology feature sizes decrease, single event upset (SEU), digital single event transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of microcircuits. Recent test circuits and test methods have quantified the pulse widths of DSETs generated from heavy-ion strikes on critical microcircuit nodes. These pulse widths have proven to be much larger than previously thought, which substantiates the importance of DSET induced errors to the soft error rate (SER) of modern microcircuits. In Phase II, we will extend our Phase I single event effect (SEE) circuit modeling approaches which couple the circuit response to the charge collection mechanisms. This new work will incorporate second order recombination and diffusion effects and enable efficient and cost effective SEE simulation of advanced microcircuits. New test structures and test circuits will be designed, fabricated, and characterized in order to evaluate emerging SEE mitigation approaches based on process modifications, design hardening techniques, and substrate engineering approaches.

* information listed above is at the time of submission.

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