SEE Modeling and Mitigation in Ultra-Deep Submicron Microelectronics

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-08-C-0063
Agency Tracking Number: T071-005-0031
Amount: $749,948.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: DTRA07-005
Solicitation Number: 2007.1
Solicitation Year: 2007
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-09-08
Award End Date (Contract End Date): 2010-09-07
Small Business Information
4775 Centennial Avenue, Suite 130, Colorado Springs, CO, 80919
DUNS: 619085371
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Mavis
 Chief Scientist
 (505) 294-1962
Business Contact
 Karen Van Cura
Title: Chief Financial Officer
Phone: (719) 531-0805
Research Institution
As technology feature sizes decrease, single event upset (SEU), digital single event transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of microcircuits. Recent test circuits and test methods have quantified the pulse widths of DSETs generated from heavy-ion strikes on critical microcircuit nodes. These pulse widths have proven to be much larger than previously thought, which substantiates the importance of DSET induced errors to the soft error rate (SER) of modern microcircuits. In Phase II, we will extend our Phase I single event effect (SEE) circuit modeling approaches which couple the circuit response to the charge collection mechanisms. This new work will incorporate second order recombination and diffusion effects and enable efficient and cost effective SEE simulation of advanced microcircuits. New test structures and test circuits will be designed, fabricated, and characterized in order to evaluate emerging SEE mitigation approaches based on process modifications, design hardening techniques, and substrate engineering approaches.

* Information listed above is at the time of submission. *

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