MicroLink Devices

Company Information

Company Name
MicroLink Devices
Address
6457 W. Howard St.
Niles, IL, 60714-
Phone
1 847-588-3001
URL
n/a
DUNS
135553472
Number of Employees
n/a
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$3,406,298.00
29
SBIR Phase II
$10,743,824.00
13
STTR Phase I
$694,000.00
8
STTR Phase II
$2,000,000.00
3
Chart code to be here

Award List

  1. High Radiation Resistance Inverted Metamorphic Solar Cell

    Amount: $100,000.00

    The innovation in the proposed SBIR Phase I project is the development of a unique triple unction inverted metamorphic technology (IMM), which will enable the manufacture of very lightweight, low-cost ...

    SBIR Phase I 2010 National Aeronautics and Space Administration
  2. Backside Contact Multijunction Solar Cells for Concentrator Applications

    Amount: $1,000,000.00

    The cost of electricity generated by concentrator photovoltaic systems is strongly dependent on the efficiency of the solar cells in the solar concentrator system. The efficiency of these solar cells ...

    SBIR Phase II 2010 Department of Energy
  3. High Speed InP OEIC

    Amount: $65,000.00

    The feasibility of a high speed InP based OEIC (optoelectronic integrated circuit) will be investigated.The combination of high speed InP based HBT will be integrated with a P-i-n photodetector. The i ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  4. Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

    Amount: $100,000.00

    This Small Business Technology Transfer Research (STTR) Phase I Project will further develop a nanostructure technology for use as the active material of a fiber optic laser. Prior research has demons ...

    SBIR Phase I 2002 National Science Foundation
  5. STTR Phase II: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

    Amount: $500,000.00

    This Small Business Technology Transfer (STTR) Phase II project will develop a vertical cavity surface emitting laser (VCSEL) that operates at 1.3 micron wavelength based on incorporating a quantum do ...

    STTR Phase II 2003 National Science Foundation
  6. STTR Phase II: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

    Amount: $0.00

    This Small Business Technology Transfer (STTR) Phase II project will develop a vertical cavity surface emitting laser (VCSEL) that operates at 1.3 micron wavelength based on incorporating a quantum do ...

    STTR Phase I 2003 National Science Foundation
  7. Single Chip InGaP HBT for T/R modules

    Amount: $99,000.00

    A fully monolithically-integrated X-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. A single device structure ...

    SBIR Phase I 2006 Air ForceDepartment of Defense
  8. InP/GaAsSb HBT MMIC for W-Band

    Amount: $69,750.00

    High-speed devices using InP play a critical role in the realization of power amplifiers for wireless and optical communication systems. Current gain cut-off frequencies in excess of 200 GHz have been ...

    SBIR Phase I 2005 National Aeronautics and Space Administration
  9. Advanced Multijunction Solar Cell on Misoriented GaAs Substrates

    Amount: $100,000.00

    The significance of the innovation in this Phase I SBIR is the development of a low cost compound semiconductor material for high efficiency and high specific power solar array technology. This will ...

    SBIR Phase I 2007 Office of the Secretary of DefenseDepartment of Defense
  10. Photovoltaic Cells for Very High Altitude Very Long Endurance Solar Aircraft

    Amount: $99,000.00

    The significance of the innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a light weight, low cost cost , multi-band gap compound semiconductor m ...

    SBIR Phase I 2007 Defense Advanced Research Projects AgencyDepartment of Defense

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