Single Chip InGaP HBT for T/R modules
Department of Defense
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6457 Howard Street, Niles, IL, 60714
Socially and Economically Disadvantaged:
AbstractA fully monolithically-integrated X-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. A single device structure designed for both the transmit and receive function is proposed to simplify the design and to lower the cost. The focus in phase I is to realize a low noise figure in InGaP HBT technology.
* information listed above is at the time of submission.