Single Chip InGaP HBT for T/R modules

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,000.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
FA9453-06-M-0151
Award Id:
78486
Agency Tracking Number:
F061-257-3850
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
6457 Howard Street, Niles, IL, 60714
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135553472
Principal Investigator:
NorenPan
President
(847) 588-3001
noren_pan@mindspring.com
Business Contact:
NorenPan
President
(847) 588-3001
noren_pan@mindspring.com
Research Institute:
n/a
Abstract
A fully monolithically-integrated X-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. A single device structure designed for both the transmit and receive function is proposed to simplify the design and to lower the cost. The focus in phase I is to realize a low noise figure in InGaP HBT technology.

* information listed above is at the time of submission.

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