Single Chip InGaP HBT for T/R modules

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-06-M-0151
Agency Tracking Number: F061-257-3850
Amount: $99,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2006
Solitcitation Year: 2006
Solitcitation Topic Code: AF06-257
Solitcitation Number: 2006.1
Small Business Information
6457 Howard Street, Niles, IL, 60714
Duns: 135553472
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Noren Pan
 (847) 588-3001
Business Contact
 Noren Pan
Title: President
Phone: (847) 588-3001
Research Institution
A fully monolithically-integrated X-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. A single device structure designed for both the transmit and receive function is proposed to simplify the design and to lower the cost. The focus in phase I is to realize a low noise figure in InGaP HBT technology.

* information listed above is at the time of submission.

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