InP/GaAsSb HBT MMIC for W-Band

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$69,750.00
Award Year:
2005
Program:
SBIR
Phase:
Phase I
Contract:
NNC05CA76C
Award Id:
74422
Agency Tracking Number:
042368
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
6457 Howard Street, Niles, IL, 60714
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135553472
Principal Investigator:
Noren Pan
Principal Investigator
(847) 588-3001
noren_pan@mindspring.com
Business Contact:
Noren Pan
Business Official
(847) 588-3001
noren_pan@mindspring.com
Research Institute:
n/a
Abstract
High-speed devices using InP play a critical role in the realization of power amplifiers for wireless and optical communication systems. Current gain cut-off frequencies in excess of 200 GHz have been demonstrated for InP HBTs, indicating the potential of these devices for use in high bandwidth communication systems and high-speed direct digital synthesizers. To achieve a higher output power and higher efficiency, InP HBT based on GaAsSb base layer is proposed in this research effort. This novel material technology offers the highest potential to achieve the highest output power and efficiency at W-band. We would like to achieve at least 1W of output power at W-band with at least an efficiency of 40%.

* information listed above is at the time of submission.

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