InP/GaAsSb HBT MMIC for W-Band

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNC05CA76C
Agency Tracking Number: 042368
Amount: $69,750.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: E1.06
Solicitation Number: N/A
Small Business Information
6457 Howard Street, Niles, IL, 60714-2232
DUNS: 135553472
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Noren Pan
 Principal Investigator
 (847) 588-3001
Business Contact
 Noren Pan
Title: Business Official
Phone: (847) 588-3001
Research Institution
High-speed devices using InP play a critical role in the realization of power amplifiers for wireless and optical communication systems. Current gain cut-off frequencies in excess of 200 GHz have been demonstrated for InP HBTs, indicating the potential of these devices for use in high bandwidth communication systems and high-speed direct digital synthesizers. To achieve a higher output power and higher efficiency, InP HBT based on GaAsSb base layer is proposed in this research effort. This novel material technology offers the highest potential to achieve the highest output power and efficiency at W-band. We would like to achieve at least 1W of output power at W-band with at least an efficiency of 40%.

* Information listed above is at the time of submission. *

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