Advanced Multijunction Solar Cell on Misoriented GaAs Substrates
Department of Defense
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6457 Howard Street, Niles, IL, 60714
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AbstractThe significance of the innovation in this Phase I SBIR is the development of a low cost compound semiconductor material for high efficiency and high specific power solar array technology. This will be accomplished by the development of a production worthy Multiple-layer Epitaxial Lift Off (MELO) process. Focus will be given to GaAs based solar cells including lattice-matched InGaP materials for dual bandgap devices. This technology will provide high conversion efficiency and cost effective solar cells for terrestrial concentrator systems in addition to high specific power density for Space applications.
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