High Efficiency Lightweight Triple Junction GaAs Solar Cells

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-08-C-0110
Agency Tracking Number: O071-ES4-1039
Amount: $749,962.00
Phase: Phase II
Program: SBIR
Awards Year: 2008
Solicitation Year: 2007
Solicitation Topic Code: OSD07-ES4
Solicitation Number: 2007.1
Small Business Information
6457 Howard Street, Niles, IL, 60714
DUNS: 135553472
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Noren Pan
 (847) 588-3001
Business Contact
 Noren Pan
Title: President
Phone: (847) 588-3001
Email: npan@mldevices.com
Research Institution
The significance of the innovation in this Phase II SBIR is the development of a low cost lightweight multi-bandgap GaAs semiconductor material for high efficiency multijunction solar cells for space applications. This effort will advance space solar cell development by improvements in the efficiency and weight of GaAs based solar cells. This will be accomplished by applying our lift-off process to a triple junction bandgap structure on GaAs substrates. The complete elimination of the GaAs substrate from the solar cell active area is the pathway to significant weight reduction. The triple junction structure will consist of lattice-matched InGaP, GaAs, and InGaAs (1.0 eV) cells to capture a majority of the solar spectrum in space. The efficiency target is 29% under 1 sun AM1.5 for the lifted-off solar cell. The cost reduction target is 50% using a combination of recycled GaAs substrates from the lift-off process and large area 6-inch GaAs substrates.

* information listed above is at the time of submission.

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