InGaP HBT Lift-Off for High Efficiency L-band T/R Module

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$100,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
NNX09CD87P
Award Id:
90686
Agency Tracking Number:
084998
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
6457 Howard Street, Niles, IL, 60714
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135553472
Principal Investigator:
Noren Pan
Principal Investigator
(847) 588-3001
npan@mldevices.com
Business Contact:
Noren Pan
Business Official
(847) 588-3001
npan@mldevices.com
Research Institution:
n/a
Abstract
This proposal addresses the need for the development of higher efficiency power amplifiers at L-band using GaAs HBT (heterojunction bipolar transistors) for pulsed mode radar applications. In this proposal we offer a novel approach for signifcantly improving the thermal characteristics of high power GaAs based HBTs. This work will be accomplished by the development of a high-yield, 4-inch epitaxial liftoff (ELO) technology accompanied by the bonding of the GaAs device wafer onto a diamond substrate. The power added efficiency is expected to be at least 65% with an improvement in power density by 50%.

* information listed above is at the time of submission.

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