InGaP HBT Lift-Off for High Efficiency L-band T/R Module

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX09CD87P
Agency Tracking Number: 084998
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
6457 Howard Street, Niles, IL, 60714
DUNS: 135553472
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Noren Pan
 Principal Investigator
 (847) 588-3001
Business Contact
 Noren Pan
Title: Business Official
Phone: (847) 588-3001
Research Institution
This proposal addresses the need for the development of higher efficiency power amplifiers at L-band using GaAs HBT (heterojunction bipolar transistors) for pulsed mode radar applications. In this proposal we offer a novel approach for signifcantly improving the thermal characteristics of high power GaAs based HBTs. This work will be accomplished by the development of a high-yield, 4-inch epitaxial liftoff (ELO) technology accompanied by the bonding of the GaAs device wafer onto a diamond substrate. The power added efficiency is expected to be at least 65% with an improvement in power density by 50%.

* Information listed above is at the time of submission. *

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