RARE EARTH DOPED III-V SEMICONDUCTORS FOR OPTOELECTRONICS

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$49,995.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
17782
Agency Tracking Number:
17782
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
4516 Henry Street, Ste 403, Pittsburgh, PA, 15213
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr M. H. Francombe
(412) 681-0888
Business Contact:
() -
Research Institution:
n/a
Abstract
THE PROJECT WILL FOCUS ON DEVELOPING PROCEDURES FOR THE FABRICATION AND EVALUATION OF EPITAXIAL LAYERS OF III-V COMPOUND SEMICONDUCTORS WHICH ARE DOPED WITH RARE EARTH (RE) IONS. THE RE IONS ARE TO BE INCORPORATED IN A 3+ VALENCY SUCH THAT EFFICIENT INTRAATOMIC (4F-4F) TRANSITIONS CAN BE OBSERVED. THE DOPED MATERIAL IS TO BE FABRICATED VIA METAL-ORGANIC VAPOR DEPOSITION (MOCVD). QUALITATIVE AND QUANTITATIVE EVALAUTIONS ARE TO BE PERFORMED VIA LUMINESCENCE MEASUREMENTS, DEEP LEVEL TRANSIENT SPECTROSCOPY AND MOBILITY AND RESISTIVITY MEASUREMENTS. IN PHASE I WE SHALL CONCENTRATE OUR EFFORTS ON ESTABLISHING THE GROWTH PARAMETER FOR ERBIUM DOPED GAAS AND A1GAAS IN TERMS OF OPTIMAL V/III RATIO, GROWTH TEMPERATURE AND ER DOPING CONCENTRATIONS. THE OPTICAL EVALUATIONS WILL PLAY A ROLE IN ESTABLISHING THE IDENTIFICATION OF THE LATTICE SITE OF THE INCORPARATED RE ION. SIMULTANEOUSLY, WE SHALL EXPLORE AND IDENTIFY APPROPRIATE DEVICE STRUCTURES WHICH ALLOW US TO EXPLOIT THE MATERIAL FOR LIGHT EMITTING DIODES, LASER DIODES OR AN INTEGRATED SWITCH-WITH- AMPLIFIER. ALSO, AND EVALUATION OF OTHER RE IONS, SUCH AS ND, PR, YB, SHALL BE PERFORMED WITH RESPECT TO THEIR POTENTIAL AND DESIRABILITY AS LIGHT EMITTERS AS WELL AS TO THE AVAILABILITY OF SUITABLE PRECURSORS FOR THEIR USE IN MOCVD FABRICATION.

* information listed above is at the time of submission.

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