Microwave Monolithics Inc.

Company Information

Company Name
Microwave Monolithics Inc.
Address
465 East Easy St Unit F
Simi Valley, CA, 93065
Phone
1 805-584-6642
URL
n/a
DUNS
n/a
Number of Employees
n/a
Hubzone Owned:
N
Minority Owned:
Y
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,552,070.00
26
SBIR Phase II
$6,091,020.00
14
Chart code to be here

Award List

  1. FLASH ANNELLING OF ION IMPLANTED DOPING PROFILES FOR HIGH PERFORMANCE X-BAND GAAS POWER FETS

    Amount: $324,980.00

    THIS PROGRAM WILL ADDRESS THE APPLICATION OF THE FLASH ANNEALING TECHNIQUE TO THE FABRICATION OF HIGH-PERFORMANCE ION IMPLANTED GAAS POWER FETS. THE DOPING PROFILE OF THE ACTIVE LAYER USED IN THESE MU ...

    SBIR Phase II 1985 ArmyDepartment of Defense
  2. INNOVATIVE HIGH VOLUME PRODUCTION TESTING OF MMIC'S

    Amount: $254,064.00

    EFFICIENT HIGH VOLUME TEST CAPABILITY FOR MONOLITHIC MICROWAVE INTEGRATE CIRCUITS (MMIC'S) IS A VITAL STEP TOWARD HIGH VOLUME DOD SYSTEMS IMPLEMENTATON AND THE REALIZATION OF THE POTENTIAL OF THIS RAP ...

    SBIR Phase II 1984 Air ForceDepartment of Defense
  3. ADVANCED MONOLITHIC GALLIUM-ARSENIDE SWITCH MATRIX

    Amount: $488,817.00

    THIS PROJECT IMPLEMENTS A WIDEBAND, INTERMEDIATE FREQUENCY SWITCH MATRIX THROUGH THE APPLICATION OF A MONOLITHIC MICROWAVE INTEGRATED CIRCUIT. HIGHLIGHTS OF THE SWITCH MATRIX ARE A 10 BY 10 MONOLITHIC ...

    SBIR Phase II 1984 National Aeronautics and Space Administration
  4. COMPONENTS

    Amount: $79,658.00

    ALTHOUGH HIGH PERFORMANCE GAAS VARACTOR DIODES ARE READILY AVAILABLE AS DISCRETE DEVICES FABRICATED ON HEAVILY DOPED MATERIAL, THEIR INCLUSION IN MMIC (MONOLITHIC MICROWAVE INTEGRATED CIRCUIT) COMPONE ...

    SBIR Phase I 1985 ArmyDepartment of Defense
  5. ADVANCED LOW-COST UNIVERSAL 20 GHZ MONOLITHIC RECEIVER FRONT-END

    Amount: $499,930.00

    THIS PROJECT WILL STUDY THE DESIGN OF A MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) IMPLEMENTATION OF A VERSATILE, LOW COST, MULTI-BAND 20 GHZ RECEIVER FRONT-END. THE TECHNICAL HIGHLIGHT OF THE REC ...

    SBIR Phase II 1986 National Aeronautics and Space Administration
  6. ADVANCED GAAS MONOLITHIC 20 GHZ RF SWITCH MATRIX FOR SPACECRAFT APPLICATIONS

    Amount: $497,089.00

    A NOVEL, ADVANCED, MONOLITHIC GAAS RF SWITCH MATRIX FOR SATELLITE COMMUNICATIONS APPLICATIONS USING A DESIGN CONCEPT ORIGINALLY DEVELOPED FOR A MONOLITHIC GAAS IF SWITCH MATRIX WILL BE STUDIED FOR APP ...

    SBIR Phase II 1986 National Aeronautics and Space Administration
  7. ADVANCED GAAS FET FOR LOW NOISE MICROWAVE AND MILLIMETER-WAVE MMIC FREQUENCY SOURCES

    Amount: $285,000.00

    FREQUENCY SOURCES (OSCILLATORS) ARE IMPORTANT COMPONENTS IN MICROWAVE AND MILLIMETER-WAVE SYSTEMS. GAAS MESFET TECHNOLOGY, IN SPITE OF ITS SUCCESS IN A VARIETY OF DISCRETE AND MONOLITHIC MICROWAVE INT ...

    SBIR Phase II 1986 Air ForceDepartment of Defense
  8. ADVANCED ON-CHIP DIVIDER FOR MONOLITHIC MICROWAVE VCOS

    Amount: $205,000.00

    DEVELOPMENT OF AN ADVANCED MONOLITHIC GAAS 8.5 VOLTAGE CONTROLLED OSCILLATOR WITH ON-CHIP GENERATION OF A LOW FREQUENCY REFERENCE OUTPUT, SUITABLE FOR PHASE LOCKED LOOP APPLICATIONS, IS PROPOSED. CIRC ...

    SBIR Phase II 1987 National Aeronautics and Space Administration
  9. ADVANCED LOW COST HIGH PERFORMANCE OPTICAL COMPONENTS FOR CD-ROM APPLICATIONS

    Amount: $499,000.00

    PERFECTION OF A NEW TECHNOLOGY IS PROPOSED TO SIMULTANEOUSLY DOUBLE OR QUADRUPLE OPTICAL MEMORY CAPACITY WHILE REDUCING ACCESS TIME BY AN ORDER OF MAGNITUDE. AN EXISTING PROTOTYPE OPTICAL DEVICE WILL ...

    SBIR Phase II 1988 National Aeronautics and Space Administration
  10. ON-CHIP TEMPERATURE COMPENSATION FOR ADVANCED MMICS

    Amount: $50,000.00

    DEVELOPMENT OF EFFECTIVE ON-CHIP TEMPERATURE COMPENSATION FOR GAAS MMICS (MONOLITHIC MICROWAVE INTEGRATED CIRCUITS) IS OF VITAL IMPORTANCE TO THE IMPLEMENTATION OF THIS TECHNOLOGY IN MICROWAVE SYSTEMS ...

    SBIR Phase I 1987 Air ForceDepartment of Defense

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