Microwave Monolithics Inc.

Company Information
Address 465 East Easy St Unit F
Simi Valley, CA, 93065


Information

DUNS:

# of Employees: N/A


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: Y

Woman Owned: N



Award Charts




Award Listing

  1. MINIATURE HIGH EFFICIENCY 40 WATT MONOLITHIC GAAS POWER MODULE

    Amount: $74,669.00

    A THREE PHASE PROGRAM IS PROPOSED BY MICROWAVE MONOLITHICS INCORPORATED (MMINC.), WITH TEXTRON DEFENSE SYSTEMS ADVANCED TECHNOLOGY CENTER (TEXTRON) AS SUBCONTRACTOR, TO DEVELOP A MINIATURE 40 WATT (20 ...

    SBIRPhase I1988Air Force Department of Defense
  2. HIGH EFFICIENCY LOW COST GAAS MONOLITHIC RF MODULE FOR SARSAT DISTRESS BEACONS

    Amount: $50,000.00

    N/A

    SBIRPhase I1988National Aeronautics and Space Administration
  3. ADVANCED ON-CHIP DIVIDER FOR MONOLITHIC MICROWAVE VCOS

    Amount: $205,000.00

    DEVELOPMENT OF AN ADVANCED MONOLITHIC GAAS 8.5 VOLTAGE CONTROLLED OSCILLATOR WITH ON-CHIP GENERATION OF A LOW FREQUENCY REFERENCE OUTPUT, SUITABLE FOR PHASE LOCKED LOOP APPLICATIONS, IS PROPOSED. CIRC ...

    SBIRPhase II1987National Aeronautics and Space Administration
  4. ON-CHIP TEMPERATURE COMPENSATION FOR ADVANCED MMICS

    Amount: $50,000.00

    DEVELOPMENT OF EFFECTIVE ON-CHIP TEMPERATURE COMPENSATION FOR GAAS MMICS (MONOLITHIC MICROWAVE INTEGRATED CIRCUITS) IS OF VITAL IMPORTANCE TO THE IMPLEMENTATION OF THIS TECHNOLOGY IN MICROWAVE SYSTEMS ...

    SBIRPhase I1987Air Force Department of Defense
  5. ADVANCED DIELECTRIC CAP FOR III-V ION IMPLANTATION

    Amount: $40,000.00

    ION IMPLANTATION HAS BEEN DEMONSTRATED TO BE THE LEADING FABRICATION TECHNOLOGY FOR HIGHLY UNIFORM DOPING OF SEMICONDUCTORS. HOWEVER, SEVERAL PROBLEMS ASSOCIATED WITH ION IMPLANTATION NOW HINDERS THE ...

    SBIRPhase I1987National Science Foundation
  6. ADVANCED LOW COST HIGH PERFORMANCE OPTICAL COMPONENTS FOR CD-ROM APPLICATIONS

    Amount: $50,000.00

    N/A

    SBIRPhase I1987National Aeronautics and Space Administration
  7. ADVANCED LOW-COST UNIVERSAL 20 GHZ MONOLITHIC RECEIVER FRONT-END

    Amount: $499,930.00

    THIS PROJECT WILL STUDY THE DESIGN OF A MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) IMPLEMENTATION OF A VERSATILE, LOW COST, MULTI-BAND 20 GHZ RECEIVER FRONT-END. THE TECHNICAL HIGHLIGHT OF THE REC ...

    SBIRPhase II1986National Aeronautics and Space Administration
  8. ADVANCED GAAS MONOLITHIC 20 GHZ RF SWITCH MATRIX FOR SPACECRAFT APPLICATIONS

    Amount: $497,089.00

    A NOVEL, ADVANCED, MONOLITHIC GAAS RF SWITCH MATRIX FOR SATELLITE COMMUNICATIONS APPLICATIONS USING A DESIGN CONCEPT ORIGINALLY DEVELOPED FOR A MONOLITHIC GAAS IF SWITCH MATRIX WILL BE STUDIED FOR APP ...

    SBIRPhase II1986National Aeronautics and Space Administration
  9. ADVANCED GAAS FET FOR LOW NOISE MICROWAVE AND MILLIMETER-WAVE MMIC FREQUENCY SOURCES

    Amount: $285,000.00

    FREQUENCY SOURCES (OSCILLATORS) ARE IMPORTANT COMPONENTS IN MICROWAVE AND MILLIMETER-WAVE SYSTEMS. GAAS MESFET TECHNOLOGY, IN SPITE OF ITS SUCCESS IN A VARIETY OF DISCRETE AND MONOLITHIC MICROWAVE INT ...

    SBIRPhase II1986Air Force Department of Defense
  10. FLASH ANNELLING OF ION IMPLANTED DOPING PROFILES FOR HIGH PERFORMANCE X-BAND GAAS POWER FETS

    Amount: $324,980.00

    THIS PROGRAM WILL ADDRESS THE APPLICATION OF THE FLASH ANNEALING TECHNIQUE TO THE FABRICATION OF HIGH-PERFORMANCE ION IMPLANTED GAAS POWER FETS. THE DOPING PROFILE OF THE ACTIVE LAYER USED IN THESE MU ...

    SBIRPhase II1985Army Department of Defense

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