FLASH ANNELLING OF ION IMPLANTED DOPING PROFILES FOR HIGH PERFORMANCE X-BAND GAAS POWER FETS

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$324,980.00
Award Year:
1985
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
69
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Microwave Monolithics Inc.
465 Easy Street, Unit F, Simi Valley, CA, 93065
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
Daniel R. Ch'en
(805) 584-6642
Research Institution:
n/a
Abstract
THIS PROGRAM WILL ADDRESS THE APPLICATION OF THE FLASH ANNEALING TECHNIQUE TO THE FABRICATION OF HIGH-PERFORMANCE ION IMPLANTED GAAS POWER FETS. THE DOPING PROFILE OF THE ACTIVE LAYER USED IN THESE MUST EXHIBIT A SHARP ACTIVE LAYER-SUBSTRATE INTERFACE SO THAT ABRUPT PINCH OFF CAN BE OBTAINED. THIS IS VERY IMPORTANT IN ORDER TO OBTAIN HIGH POWER OUTPUT CAPAVILITY AND EFFICIENCY, ESPECIALLY WHEN THE DC POWER IS THROTTLED DOWN. THE ABILITY OF THE FLASH ANNEALING IN PRODUCING SHARP DOPING PROFILES THROUG REDUCTION OF DIFFUSION DURING HIGH-TEMPERTURE PROCESSING WILL MAKE POSSIBLE HIGHER PERFORMING POWER FETS. THE PRECISE SYNTHESIS OF DOPING PROFILES WITH FLASH ANNEALING OF MULTIPLE ION IMPLANTATION WILL BE STUDIED. THE ENHANCEMENT IN PERFORMANCE SUCH AS POWER OUTPUT, EFFICIENCY, GAIN, AND DYNAMIC RANGE OF POWER FETS USING THESE DOPING PROFILES WILL BE DEMONSTRATED.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government