COMPONENTS

Award Information
Agency: Department of Defense
Branch: Army
Contract: N/A
Agency Tracking Number: 2382
Amount: $79,658.00
Phase: Phase I
Program: SBIR
Awards Year: 1985
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
465 E Easy St, Simi Valley, CA, 93065
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 WENDELL C PETERSEN
 (805) 584-6642
Business Contact
Phone: () -
Research Institution
N/A
Abstract
ALTHOUGH HIGH PERFORMANCE GAAS VARACTOR DIODES ARE READILY AVAILABLE AS DISCRETE DEVICES FABRICATED ON HEAVILY DOPED MATERIAL, THEIR INCLUSION IN MMIC (MONOLITHIC MICROWAVE INTEGRATED CIRCUIT) COMPONENTS IS PRECLUDED BY THE REQUIREMENT FOR A SEMI-INSULATING SUBSTRATE. HIGHQ IS REQUIRED FOR HIGH PERFORMANCE MILLIMETER WAVE COMPONENTS SUCH AS VCO'S, TUNABLE FILTERS, AND FREQUENCY MULTIPLIERS. A DEVELOPMENT PROGRAM FOR HIGH PERFORMANCE GAAS VARACTOR DIODES COMPATIBLE WITH MMICAND HEMT TECHNOLOGY AT MICROWAVE AND MILLIMETER WAVE FREQUENCIES IS HEREBY PROPOSED. INCLUDED ARE THEORETICAL AND EXPERIMENTAL EVALUATION OF VERTICAL (BURIED CONTACT VARACTOR) AND HORIZONTAL (LATERAL VARACTOR) GEOMETRIES. ION IMPLANTATION IS USED TO FORM THE ACTIVE LAYERS AS WELL AS LOW RESISTANCE CONTACTS FOR HIGH Q, AND TAILORING OF THE DOPING PROFILES IS CONSIDERED FOR OPTIMIZATION TO VARIOUS PERFORMANCE OBJECTIVES. A PROPRIETARY "FLASH ANNEALING" TECHNIQUE IS USED TO MINIMIZE DIFFUSION AND PRESERVE THE IMPLANTED PROFILE.

* Information listed above is at the time of submission. *

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