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Periodic Silicon Carbide Limiter

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-01-C-0254
Agency Tracking Number: 525030120
Amount: $401,964.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
735 State Street
Santa Barbara, CA 93101
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 John McAdoo
 (703) 339-6500
Business Contact
 Scot Fries
Phone: (805) 963-8761
Research Institution
 Eugene J Hinman
11100 Johns Hopkins Road
Laurel, MD 20723
United States

 (443) 778-5687
 Nonprofit College or University

Two microwave limiters will be built from silicon carbide (SiC) field effect transistors (FETs). The first will operate between 1 and 5 GHz with insertion loss below 0.8 dB. This limiter will protect down stream low-noise amplifiers from exposure to 200 Wcontinuous wave (CW) radiation. The second limiter will operate between 4 and 20 GHz with less than 0.8 dB of insertion loss across the band. It will protect downstream components from 50 W CW.Individual SiC FEts will be used in a flip-chip package to minimize parasitic apacitance and inductance. The package foot print will be no larger than 3 x 3 cm.BENEFITS: A multi-octave SiC FET-based limiter offers unsurpassed performance with wide militaryand commercial applications. Due to its small footprint and tolerance to high temperature, it is ideally suited for upgrading systems already in wide use. In addition, it will provide protection from high-power pulsed sources - and area just beginning tobe addressed by military planners. Similarly, as the exploding wireless technology floods the commercial market, needs will be surfacing for similar protection for these products.

* Information listed above is at the time of submission. *

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