You are here
A Very Deep Submicron Cell Library and Design System for Radiation Hardened ASICs
Title: Principal Investigator
Phone: (505) 768-7734
Title: Director of Contracts
Phone: (805) 963-8761
"The proposed project will design, demonstrate, and market a very deep submicron cell library and design system for radiation hardened ASICs and standard products. Specifically, we will develop a scaleable 0.18 ¿m, hardened by design (HBD) cell library tosupport the radiation hardening of ASICs fabricated in commercial silicon foundries, but exhibiting total dose hardness in excess of 300 Krad(Si), single event effects immunity, and dose rate hardness in excess of 1x10^9 rad(Si)/s. The library willsupport synthesis of ASICs from VHDL or Verilog descriptions of the circuit function. Macrocell and megacell functions to be supported include boundary scan I/O, JTAG, LVDS I/O, ROM compiler, SRAM compiler, phase lock loops, and scan path cells. Theperformance and radiation hardness will be demonstrated by designing and fabricating a digital signal processor, which will also become an embeddable megacell in the library."
* Information listed above is at the time of submission. *