You are here

A Very Deep Submicron Cell Library and Design System for Radiation Hardened ASICs

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: DTRA01-02-C-0073
Agency Tracking Number: T2-0036
Amount: $0.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
735 State Street
Santa Barbara, CA 93101
United States
DUNS: 062090113
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 John Bailey
 Principal Investigator
 (505) 768-7734
Business Contact
 Scot Fries
Title: Director of Contracts
Phone: (805) 963-8761
Research Institution

"The proposed project will design, demonstrate, and market a very deep submicron cell library and design system for radiation hardened ASICs and standard products. Specifically, we will develop a scaleable 0.18 ¿m, hardened by design (HBD) cell library tosupport the radiation hardening of ASICs fabricated in commercial silicon foundries, but exhibiting total dose hardness in excess of 300 Krad(Si), single event effects immunity, and dose rate hardness in excess of 1x10^9 rad(Si)/s. The library willsupport synthesis of ASICs from VHDL or Verilog descriptions of the circuit function. Macrocell and megacell functions to be supported include boundary scan I/O, JTAG, LVDS I/O, ROM compiler, SRAM compiler, phase lock loops, and scan path cells. Theperformance and radiation hardness will be demonstrated by designing and fabricating a digital signal processor, which will also become an embeddable megacell in the library."

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government