LWIR Focal Plane Array Based on Type-II InAs/GaSb Superlattices

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-04-C-7078
Agency Tracking Number: 022-0391
Amount: $1,249,530.00
Phase: Phase II
Program: SBIR
Awards Year: 2004
Solicitation Year: 2002
Solicitation Topic Code: MDA02-049
Solicitation Number: 2002.2
Small Business Information
1801 Maple Avenue, Evanston, IL, 60201
DUNS: 129503988
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Vahid Yazdanpanah
 Principal Investigator
 (847) 256-7648
 yazdan_v@yahoo.com
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 256-7648
Email: razeghi@ece.northwestern.edu
Research Institution
N/A
Abstract
Infrared photon sensors presently available for THAAD applications, with a cutoff wavelength ~8 micron, are based on HgCdTe. These suffer from a high non-uniformity and thus a high focal plane array cost. The most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as type-II InAs/GaSb superlattices, which are expected to exhibit higher quantum efficiency and uniformity than current systems. This Phase II project plans to advance the technology for type-II InAs/GaSb superlattices in order to demonstrate a prototype 256x320 focal plane array with an ~8 micron cutoff wavelength.

* Information listed above is at the time of submission. *

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