LWIR Focal Plane Array Based on Type-II InAs/GaSb Superlattices

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$1,249,530.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
HQ0006-04-C-7078
Agency Tracking Number:
022-0391
Solicitation Year:
2002
Solicitation Topic Code:
MDA02-049
Solicitation Number:
2002.2
Small Business Information
MP TECHNOLOGIES, LLC
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
Y
Duns:
129503988
Principal Investigator:
Vahid Yazdanpanah
Principal Investigator
(847) 256-7648
yazdan_v@yahoo.com
Business Contact:
Manijeh Razeghi
President
(847) 256-7648
razeghi@ece.northwestern.edu
Research Institution:
n/a
Abstract
Infrared photon sensors presently available for THAAD applications, with a cutoff wavelength ~8 micron, are based on HgCdTe. These suffer from a high non-uniformity and thus a high focal plane array cost. The most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as type-II InAs/GaSb superlattices, which are expected to exhibit higher quantum efficiency and uniformity than current systems. This Phase II project plans to advance the technology for type-II InAs/GaSb superlattices in order to demonstrate a prototype 256x320 focal plane array with an ~8 micron cutoff wavelength.

* information listed above is at the time of submission.

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