LWIR Focal Plane Array Based on Type-II InAs/GaSb Superlattices
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AbstractInfrared photon sensors presently available for THAAD applications, with a cutoff wavelength ~8 micron, are based on HgCdTe. These suffer from a high non-uniformity and thus a high focal plane array cost. The most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as type-II InAs/GaSb superlattices, which are expected to exhibit higher quantum efficiency and uniformity than current systems. This Phase II project plans to advance the technology for type-II InAs/GaSb superlattices in order to demonstrate a prototype 256x320 focal plane array with an ~8 micron cutoff wavelength.
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