Multi-Color VLWIR FPA Based on Type-II InAs/GaSb Superlattice Nanostructures

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,997.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-03-C-0033
Award Id:
59196
Agency Tracking Number:
022-0391
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
129503988
Principal Investigator:
StevenSlivken
Technical Director
(847) 491-7251
s_slivken@hotmail.com
Business Contact:
ManijehRazeghi
President
(847) 491-7251
razeghi@ece.northwestern.edu
Research Institute:
n/a
Abstract
"At present, the most promising technology for VLWIR focal plane array applications is III-V compound semiconductor superlattices based on arsenides and antimonides, such as type-II InAs/GaSb, because of their much larger area and bandgap uniformity, andhigher operating temperatures than currently available technologies. It is here proposed to study the feasibility of innovative nanostructures in this material system to add arbitrary wavelength detection capability for multi-color VLWIR applications.The physical characteristics of type-II InAs/GaSb superlattices and nanostructures will be modeled. Type-II materials will be grown and characterized, and nanostructures will be subsequently fabricated. Detectors based on this technology will befabricated and tested in order to evaluate the viability of the proposed approach. Upon successful achievement of the proposed work, it is anticipated that a method of achieving multi-color VLWIR detectors using type-II InAs/GaSb superlattice material andnanostructures be demonstrated. Higher quality and uniformity material will be realized. This will in turn enhance the prospect of focal plane arrays exhibiting similar operational characteristics for space-based applications, including long rangemissile threat warning and astronomy. The developed material technology will also have a far reaching impact on the development of mid to very long wavelength infrared devices, such as uncooled infrar

* information listed above is at the time of submission.

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