Type-II InAs/GaSb Superlattice Detectors and Focal Plane Arrays in the Very-Long Wavelength Infrared Range

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-03-C-5422
Agency Tracking Number: 021ML-2318
Amount: $749,800.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
MP TECHNOLOGIES, LLC
1801 Maple Avenue, Evanston, IL, 60201
DUNS: 129503988
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Steven Slivken
 Technical Director
 (847) 491-7251
 s_slivken@hotmail.com
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 491-7251
Email: razeghi@ece.northwestern.edu
Research Institution
N/A
Abstract
Photon detectors presently available in the very long wave infrared range (lambda > 15 micron) are based on HgCdTe and extrinsic silicon technologies. The former technology suffers from non-uniformity, which is unacceptable for focal plane arrays, whilethe later suffers from an excessive dark current, which requires lowering the operating temperature of these detectors below 20K. At present, the most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides,such as type-II InAs/GaSb superlattices.This Phase II project plans to capitalize on the material quality improvement techniques demonstrated in the Phase I work in order to minimize the density of defects the type-II InAs/GaSb superlattices. Very long wavelength infrared photodetector devicesbased on these materials will be grown, fabricated and tested in order to validate the technical and commercial viability of the proposed approach.

* information listed above is at the time of submission.

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