Type II Superlattices on Silicon for Infrared Photodetectors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-06-C-7325
Agency Tracking Number: B041-038-0138
Amount: $500,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solitcitation Year: 2004
Solitcitation Topic Code: MDA04-038
Solitcitation Number: 2004.1
Small Business Information
1801 Maple Avenue, Evanston, IL, 60201
Duns: 129503988
Hubzone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Patrick Kung
 TEhnical Director
 (847) 491-7208
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 491-7208
Email: razeghi@ece.northwestern.edu
Research Institution
High performance infrared detectors are highly needed for next generation ballistic missile defense missions. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more affordable and producible focal plane array (FPA) technology than the current technology, while at the same time exhibiting similar or better performance. Two of the major challenges in the realization of FPA in this system pertain to the unintentionally doped p-type GaSb substrate used in the growth of type II superlattices: its strong infrared absorption and its thermal mismatch with the silicon ROIC that leads to cracking and thus limits the FPA size. It is therefore proposed here to study the feasibility of growing type II InAs/GaSb superlattices on silicon substrates in spite of a lattice mismatch of ~11 %. It is here proposed to demonstrate high quality type II superlattices, single element superlattice photodetectors and pixel arrays on more robust and optically transparent (in the infrared spectral bands of interest) Silicon substrates.

* information listed above is at the time of submission.

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