Type II InAs/GaSb Superlattices on GaAs for Infrared Photodetectors

Award Information
Agency:
Department of Defense
Amount:
$500,000.00
Program:
SBIR
Contract:
HQ0006-06-C-7326
Solitcitation Year:
2004
Solicitation Number:
2004.1
Branch:
Missile Defense Agency
Award Year:
2006
Phase:
Phase II
Agency Tracking Number:
B041-053-0139
Solicitation Topic Code:
MDA04-053
Small Business Information
MP TECHNOLOGIES, LLC
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Woman Owned:
Y
Socially and Economically Disadvantaged:
N
Duns:
129503988
Principal Investigator
 Patrick Kung
 Technical Director
 (847) 491-7208
 patrick.kung@usa.net
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 491-7208
Email: razeghi@ece.northwestern.edu
Research Institution
N/A
Abstract
Cheaper and higher performance infrared detectors in the mid and long wavelength infrared (MWIR and LWIR) spectral bands are needed for next generation ballistic missile defense programs. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more affordable and producible focal plane array (FPA) technology than the current technology, while at the same time exhibiting similar or better performance. Two of the major challenges in the realization of FPA in this system pertain to the unintentionally doped p-type GaSb substrate used in the growth of type II superlattices: its strong infrared absorption and its thermal mismatch with the ROIC that leads to cracking upon hybridization and thus limits the FPA size. It is here proposed to demonstrate a prototype single element superlattice photodetectors and pixel arrays on more robust and optically transparent (in the infrared spectral bands of interest) GaAs substrates.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government