Study of Generation Recombination Process in Type II InAs/GaSb Superlattices for High Performance VLWIR Detectors

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$98,677.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-04-C-7032
Agency Tracking Number:
B041-082-0140
Solicitation Year:
2004
Solicitation Topic Code:
MDA04-082
Solicitation Number:
2004.1
Small Business Information
MP TECHNOLOGIES, LLC
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
Y
Duns:
129503988
Principal Investigator:
Vahid Yazdanpanah
Technical Director
(847) 256-7648
yazdan_v@yahoo.com
Business Contact:
Manijeh Razeghi
President
(847) 256-7648
razeghi@ece.northwestern.edu
Research Institution:
n/a
Abstract
Very long wave infrared (VLWIR or lambda > 15 micron) photon detectors are highly needed in a number of missile defense missions. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more affordable and producible focal plane array (FPA) technology than the current technology, while at the same time exhibiting similar or better performance than current technology in this spectral band. However, one of the major obstacle in the development of such FPAs remains the generation-recombination (G-R) current which still dominates the dark current in these photodetectors. It is here proposed to study the feasibility of reducing the G-R current in such type II superlattice photodetectors through advanced modeling and design of the superlattice structures in close correlation with detector growth, fabrication and performance measurement results.

* information listed above is at the time of submission.

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