Passivation of Type II Superlattices for VLWIR Sensors

Award Information
Agency:
Department of Defense
Amount:
$99,927.00
Program:
STTR
Contract:
HQ0006-06-C-7517
Solitcitation Year:
2006
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2006
Phase:
Phase I
Agency Tracking Number:
B064-011-0002
Solicitation Topic Code:
MDA06-T011
Small Business Information
MP TECHNOLOGIES, LLC
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Woman Owned:
Y
Socially and Economically Disadvantaged:
N
Duns:
129503988
Principal Investigator
 Erick Michel
 Vice President
 (847) 491-7208
 erickjmichel@sbcglobal.net
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 491-7208
Email: razeghi@ece.northwestern.edu
Research Institution
 NORTHWESTERN UNIV.
 Charlotte A Trink
 633 Clark St Room 2-502
Evanston, IL, 60208
 (847) 491-1967
 Nonprofit college or university
Abstract
Very long wavelength infrared (VLWIR) detectors are highly needed for midcourse phase missile defense. Blocked impurity band detectors are capable of sensing at these wavelengths but require extremely low temperatures, in the 10K or less range. The InAs/GaSb Type II heterostructure system offers unique design flexibility for new innovative detectors. By incorporating dark current reduction techniques, we can provide the basis for 77K detection in the 15-25 micrometer spectral range. Several tasks are required to address the application of Type II superlattices for VLWIR sensors: (i) Design of a suitable structure with cutoff wavelength in the VLWIR at the desired operating temperature (ii) Optimization of the epitaxial growth conditions for VLWIR superlattice material with the goal of minimizing recombination centers, and (iii) Development of processes for uniform and reproducible sidewall passivation.

* information listed above is at the time of submission.

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