Passivation of Type II Superlattices for VLWIR Sensors

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,927.00
Award Year:
2006
Program:
STTR
Phase:
Phase I
Contract:
HQ0006-06-C-7517
Agency Tracking Number:
B064-011-0002
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
MP TECHNOLOGIES, LLC
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
129503988
Principal Investigator:
Erick Michel
Vice President
(847) 491-7208
erickjmichel@sbcglobal.net
Business Contact:
Manijeh Razeghi
President
(847) 491-7208
razeghi@ece.northwestern.edu
Research Institution:
NORTHWESTERN UNIV.
Charlotte A Trink
633 Clark St Room 2-502
Evanston, IL, 60208
(847) 491-1967
Nonprofit college or university
Abstract
Very long wavelength infrared (VLWIR) detectors are highly needed for midcourse phase missile defense. Blocked impurity band detectors are capable of sensing at these wavelengths but require extremely low temperatures, in the 10K or less range. The InAs/GaSb Type II heterostructure system offers unique design flexibility for new innovative detectors. By incorporating dark current reduction techniques, we can provide the basis for 77K detection in the 15-25 micrometer spectral range. Several tasks are required to address the application of Type II superlattices for VLWIR sensors: (i) Design of a suitable structure with cutoff wavelength in the VLWIR at the desired operating temperature (ii) Optimization of the epitaxial growth conditions for VLWIR superlattice material with the goal of minimizing recombination centers, and (iii) Development of processes for uniform and reproducible sidewall passivation.

* information listed above is at the time of submission.

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