Planar Engineering for Type-II Superlattices (PETS

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,866.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-10-C-S205
Award Id:
92184
Agency Tracking Number:
A092-080-0150
Solicitation Year:
n/a
Solicitation Topic Code:
Army 09-080
Solicitation Number:
n/a
Small Business Information
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
129503988
Principal Investigator:
Ryan McClintock
Technical Director
(847) 491-7208
rmcclin@gmail.com
Business Contact:
Manijeh Razeghi
President
(847) 491-7208
razeghi@eecs.northwestern.edu
Research Institute:
n/a
Abstract

Type II InAs/GaSb strained layer superlattices (SLS) represent the most promising material system capable of delivering more producible, large-format MWIR and LWIR focal plane arrays (FPAs). Type-II SLS currently achieve performance comparable to that of existing mercury-cadmium-telluride (MCT) based FPAs. However, no viable planar processing techniques have been demonstrated for Type-II -V they currently rely on mesa isolated diodes. These mesas require etching, cleaning, and passivation, which complicate the processing of Type-II SLS and can decrease the yield and reliability. As such it is desirable to pursue a planar processing technique that is compatible with Type-II superlattices. In this proposal we present a novel planar design compatible with Type-II design called Planar Engineering for Type-II Superlatices (PETS). PETS consists of a reduced area p-type GaSb layer that is fabricated via selective area re-growth in a trench in a Y_-type (lightly n-type) absorbing layer. This eliminates the need to passivate the devices and simplifies the processing, and thus can be expected to increase the yield and reliability leading to a more producible FPA. In addition PETS allows for a reduced junction area while maintaining the optical area of the device. This will reduce the dark current and lead to higher signal to noise ratios.

* information listed above is at the time of submission.

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