LWIR Focal Plane Arrays based on Type-II InAs/GaSb Superlattices
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1801 Maple Avenue, Evanston, IL, 60201
AbstractInfrared photon sensors presently available for ballistic missile defense applications, with a cutoff wavelength ~10 micron, are based on HgCdTe. These suffer from a high non-uniformity and thus a high focal plane array cost. The most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as Type-II InAs/GaSb superlattices, which are expected to exhibit higher quantum efficiency and uniformity than current systems. This Phase II project plans to capitalize on previous Phase I and Phase II efforts, integrating them in order to advance the technology for Type-II InAs/GaSb superlattices in order to demonstrate and deliver prototype 256x320 focal plane arrays with an ~10 micron cutoff wavelength. This improved device will incorporate a hybrid M-structure - double-heterostructure design for significantly improved R0A and overall device performance.
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