LWIR Focal Plane Arrays based on Type-II InAs/GaSb Superlattices

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$1,031,650.00
Award Year:
2009
Program:
SBIR
Phase:
Phase II
Contract:
HQ0147-09-C-7030
Agency Tracking Number:
B073-032-0024
Solicitation Year:
2007
Solicitation Topic Code:
MDA07-032
Solicitation Number:
2007.3
Small Business Information
MP Technologies, LLC
1801 Maple Avenue, Evanston, IL, 60201
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
Y
Duns:
129503988
Principal Investigator:
Ryan McClintock
Technical Director
(847) 491-7208
rmcclin@gmail.com
Business Contact:
Manijeh Razeghi
President
(847) 491-7208
razeghi@eecs.northwestern.edu
Research Institution:
n/a
Abstract
Infrared photon sensors presently available for ballistic missile defense applications, with a cutoff wavelength ~10 micron, are based on HgCdTe. These suffer from a high non-uniformity and thus a high focal plane array cost. The most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as Type-II InAs/GaSb superlattices, which are expected to exhibit higher quantum efficiency and uniformity than current systems. This Phase II project plans to capitalize on previous Phase I and Phase II efforts, integrating them in order to advance the technology for Type-II InAs/GaSb superlattices in order to demonstrate and deliver prototype 256x320 focal plane arrays with an ~10 micron cutoff wavelength. This improved device will incorporate a hybrid M-structure – double-heterostructure design for significantly improved R0A and overall device performance.

* information listed above is at the time of submission.

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