Generation and Deposition of Nanoscale Particles for Reference Wafers

Award Information
Agency: Department of Commerce
Branch: N/A
Contract: 26
Agency Tracking Number: 30914
Amount: $49,767.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1995
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1313 Fifth Street S.E., Suite 206, Minneapolis, MN, 55414
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 James Jinjun Sun
 Manager, R&D
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
In the semiconductor industry, standard reference wafers are needed for calibrating wafer surface scanners. Scanners are currently available for detecting particles down to a lower size limit of approximately 100 nm (0.1 um). Advanced wafer scanners capable of detecting particles to 60 nm will be needed for future generation of devices such as the 1 Gbit DRAMs (dynamic random access memory) expected by the year 2002. This proposal is concerned with developing advanced concepts for generating and depositing PSL spheres to 30 nm. In the Phase I proposal, the lower size limit of the current PSL generation methods will first be established experimentally. Various atomizer concepts will then be explored to identify those capable of producing fine droplets with a maximum droplet diameters in the 0.1-0.5 um range in order to reduce the residue particles to the < 10 nm diameter range. The residue particles are formed when empty water droplets containing dissolved impurities are evaporated. Since they are generated and deposited simultaneously with the PSL spheres, they must be of a considerably smaller size than the PSL in order to avoid interfering with the PSL in producing light scattering signals for wafer scanner calibration.

* Information listed above is at the time of submission. *

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