High Flux Atomic Nitrogen Source for GaN Growth

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,671.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
F3361503M5430
Agency Tracking Number:
031-0186
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
NANOHMICS, INC.
4302 Rimdale Dr., Austin, TX, 78731
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
100651798
Principal Investigator:
Keith Jamison
President
(512) 349-0835
kjamison@austin.rr.com
Business Contact:
Keith Jamison
President
(512) 349-0835
kjamison@nanohmics.com
Research Institution:
n/a
Abstract
Current gallium nitride epitaxial growth systems suffer from low atomic nitrogen flux density, yielding materials having high intrinsic conduction due to nitrogen deficiencies or defects. A number of atomic nitrogen sources exist for MBE epitaxial growthof gallium nitride but the flux density is relatively low and these sources still contain a significant percentage of molecular nitrogen in the beam which can lead to defects. Nanohmics proposes to use a high-flux-density atomic nitrogen source for defectfree epitaxial gallium nitride (GaN) growth. This unique nitrogen source uses using supersonic beam technology. This technology will greatly increase the atomic nitrogen flux density striking the surface during growth.Supersonic beams have a number of advantages over conventional gas sources. First, the mean free path is longer than the source-to-sample distance eliminating gas-gas interactions therefore the atomic nitrogen will not recombine. Secondly, supersonicbeams are monoenergetic and the kinetic energy of the incident beam can be varied by changing the input gas temperature. Therefore this source can deliver a very high flux density of monoenergetic atomic nitrogen to the sample which can influence thesurface mobility and the defect density. The anticipated benefits of a high-flux-density atomic nitrogen source are improved gallium nitride growth with lower intrinsic carrier densities. The improved gallium nitride will lead to improvements in detectors for space communications, space-basedmissile launch detectors, UV search and track, environmental monitoring, engine combustion, UV diode lasers, and flame detection. Additional benefits will be in high power electronics using GaN based devices.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government