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Silicon Based High Efficiency Near Infra Red Detector

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0017803C3120
Agency Tracking Number: 031-0510
Amount: $69,968.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2003
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
4302 Rimdale Dr.
Austin, TX 78731
United States
DUNS: 100651798
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Keith Jamison
 (512) 349-0835
Business Contact
 Keith Jamison
Title: President
Phone: (512) 349-0835
Research Institution

Silicon continues to be the material of choice for most microelectronic applications. Unfortunately, silicon is not a good material for high efficiency near IR photo-emission or detection because it has an indirect bandgap. Recently, studies of b-FeSi2have shown that it can be grown into silicon and has a direct bandgap of ~0.87 eV which corresponds to a wavelength of 1.5 microns. This wavelength is ideally suited to many applications in the fiber optic communication and near IR thermal sensing. Sincethis material is silicon based, it could be directly integrated into silicon electronics. Unfortunately, current production methods to form b-FeSi2 have proven inconsistent. In this program, Nanohmics in collaboration with the University of North Texas,propose to demonstrate a novel epitaxial deposition method to produce high quality, consistent direct bandgap b-FeSi2 that has emission at 1.5 microns a reproducible manner. Development of direct bandgap silicon based optoelectronic devices will spurdevelopment of source and detector devices in the 1.3-1.6 micron range where silicon-based fibers have the lowest losses and development of directly integrated focal plane arrarys in the near infrared range. This technology will also enable opticalinterconnects in silicon devices opening the possibility of stacking chips on top of each other without the need for hard wiring the devices together.

* Information listed above is at the time of submission. *

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