Novel high strength capacitor dielectrics

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-05-C-2628
Agency Tracking Number: O043-EP7-1036
Amount: $999,864.00
Phase: Phase II
Program: SBIR
Awards Year: 2005
Solitcitation Year: 2004
Solitcitation Topic Code: OSD04-EP7
Solitcitation Number: 2004.3
Small Business Information
NANOHMICS, INC.
6201 East Oltorf St., Suite 400, Austin, TX, 78741
Duns: 100651798
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Keith Jamison
 President
 (512) 389-9990
 kjamison@nanohmics.com
Business Contact
 Keith Jamison
Title: President
Phone: (512) 389-9990
Email: kjamison@nanohmics.com
Research Institution
N/A
Abstract
Compact, high volumetric energy density, pulse-power capacitors are an enabling technology for future DoD weapon systems. These capacitors will be used in pulse forming networks (PFNs) for the conversion of prime electrical energy into short pulses needed for directed energy and kinetic energy weapons and high power microwaves. To accomplish these objectives, improvements in the capacitor dielectric properties are necessary to achieve higher volumetric energy densities. In this SBIR Phase II program Nanohmics proposes to fabricate high volumetric energy density, wound capacitors using high breakdown strength, flexible dielectrics films made using amorphous oxides. This program will build on Phase I results which demonstrated that amorphous oxide dielectrics were flexible, had high breakdown strengths and could operate at high temperatures. The Phase II program will take the best dielectric material found in Phase I and optimize the deposition process for lifetime, breakdown voltage, flexibility and scalability. The dielectric will then be deposited on a metallized polymer web anode and wound into 1 microfarad, 500 volt capacitors and tested for performance improvements over standard wound capacitors. The Phase II program will also develop a volume fabrication process suitable for production of these capacitors.

* information listed above is at the time of submission.

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